RDD050N20 Transistors 10V Drive Nch MOSFET RDD050N20 z Dimensions (Unit : mm) z Structure Silicon N-channel CPT3 MOSFET z Features 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Source) z Application Switching z Packaging specifications z Equivalent Circuit Package Taping Type Code TL 2 Basic ordering unit (pieces) 2500 RDD050N20 1 BODY DIODE 2 GATE PROTECTION 1 DIODE (1)GATE (2)DRAIN z Absolute maximum ratings (Ta=25C) (3)SOURCE Parameter Symbol Limits Unit (1) (2) (3) Drain-Source Voltage VDSS 200 V Gate-Source Voltage V 30 V GSS A protection diode is included between the gate and Continuous ID 5 A the source terminals to protect the diode against static Drain Current electricity when the product is in use. Use the protection 1 Pulsed IDP 20 A circuit when the fixed voltages are exceeded. Source Current Continuous IS 5 A 1 (Body Diode) Pulsed ISP 20 A 2 Avalanche Current I 5 A AS 2 Avalanche Energy EAS 75 mJ 20 Total Power Dissipation (TC=25C) PD W Channel Temperature T 150 ch C Storage Temperature Tstg 55 to +150 C 1 Pw 10s, Duty cycle 1% 2 L 4.5mH, VDD=50V, RG=25 , 1Pulse, Tch=25C z Thermal resistance Parameter Symbol Limits Unit Channel to case Rth(ch-c) 6.25 C/W Rev.A 1/5 RDD050N20 Transistors z Electrical characteristics (Ta=25C) Symbol Min. Typ. Max. Unit Conditions Parameter IGSS 10 A VGS=30V, VDS=0V Gate-Source Leakage Drain-Source Breakdown Voltage V(BR) DSS 200 V ID=1mA, VGS=0V IDSS 25 A VDS=200V, VGS=0V Zero Gate Voltage Drain Current Gate Threshold Voltage VGS (th) 2.0 4.0 V VDS=10V, ID=1mA Static Drain-Source On-State RDS (on) 0.55 0.72 ID=2.5A, VGS=10V Resistance Yfs 1.1 1.8 S VDS=10V, ID=2.5A Forward Transfer Admittance Input Capacitance Ciss 292 pF VDS=10V Output Capacitance Coss 92 pF VGS=0V Crss 28 pF f=1MHz Reverse Transfer Capacitance Turn-On Delay Time td (on) 10 ns ID=2.5A, VDD 100V tr 22 ns VGS=10V Rise Time Turn-Off Delay Time td (off) 23 ns RL=40 tf 28 ns RG=10 Fall Time Total Gate Charge Qg 9.3 nC VDD=100V Qgs 2.8 nC VGS=10V Gate-Source Charge Gate-Drain Charge Qgd 3.7 nC ID=5A Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Forward voltage VSD 1.5 V IS= 5.0A, VGS=0V Reverse recovery time trr 117 ns I = 5.0A, V =0V DR GS Reverse recovery charge Qrr 0.37 C di/dt= 100A / s Pulsed Rev.A 2/5