X-On Electronics has gained recognition as a prominent supplier of RE1J002YNTCL MOSFETs across the USA, India, Europe, Australia, and various other global locations. RE1J002YNTCL MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RE1J002YNTCL ROHM

RE1J002YNTCL electronic component of ROHM
RE1J002YNTCL ROHM
RE1J002YNTCL MOSFETs
RE1J002YNTCL  Semiconductors

Images are for reference only
See Product Specifications
Part No. RE1J002YNTCL
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET Small Signal MOSFET N-CH .9V Drive .2A
Datasheet: RE1J002YNTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3375 ea
Line Total: USD 0.34 
Availability - 252
Ship by Wed. 30 Apr to Fri. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2056
Ship by Fri. 09 May to Wed. 14 May
MOQ : 5
Multiples : 5
5 : USD 0.1988
50 : USD 0.156
150 : USD 0.101
500 : USD 0.08
3000 : USD 0.0713
6000 : USD 0.067

252
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.3375
10 : USD 0.205
100 : USD 0.1236
500 : USD 0.0847
1000 : USD 0.0715
3000 : USD 0.0616
6000 : USD 0.0572
9000 : USD 0.0495
24000 : USD 0.0462

609
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.434
10 : USD 0.2646
100 : USD 0.1666
298 : USD 0.063
818 : USD 0.0588

26306
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2625
Multiples : 1
2625 : USD 0.0991
2770 : USD 0.0939
3195 : USD 0.0814
6000 : USD 0.0697
12000 : USD 0.0611
24000 : USD 0.0571

13234
Ship by Fri. 02 May to Thu. 08 May
MOQ : 1153
Multiples : 1
1153 : USD 0.2256

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RE1J002YNTCL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RE1J002YNTCL and other electronic components in the MOSFETs category and beyond.

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RE1J002YN Datasheet Nch 50V 200mA Small Signal MOSFET llOutline SOT-416FL V 50V DSS SC-89 R (Max.) 2.2 DS(on) EMT3F I 200mA D P 150mW D llInner circuit llFeatures 1) Low voltage drive(0.9V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking QJ llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit Drain - Source voltage V 50 V DSS I Continuous drain current 200 mA D *1 I Pulsed drain current 800 mA DP V Gate - Source voltage 8 V GSS *2 P Power dissipation 150 mW D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/10 20160624 - Rev.001 RE1J002YN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 Thermal resistance, junction - ambient R - - 833 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 50 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 53.7 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 50V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 8V, V = 0V - - 10 A GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 0.3 - 0.8 V GS(th) DS D V I = 1mA GS(th) D Gate threshold voltage - -1.4 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 200mA - 1.6 2.2 GS D V = 2.5V, I = 200mA - 1.7 2.4 GS D Static drain - source *3 R V = 1.5V, I = 200mA - 2.0 2.8 DS(on) GS D on - state resistance V = 1.2V, I = 100mA - 2.2 3.3 GS D V = 0.9V, I = 10mA - 3.0 9.0 GS D Forward Transfer *3 Y V = 10V, I = 200mA 200 - - mS fs DS D Admittance *1 Pw10s, Duty cycle 1% *2 Each terminal mounted on a reference land. *3 Pulsed www.rohm.com 2/10 20160624 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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