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This literature is subject to all applicable copyright laws and is not for resale in any manner.RFD12N06RLESM Data Sheet October 20 13 N-Channel UltraFET Power MOSFET 60 V, 17 A, 71 m Packaging Features Ultra Low On-Resistance JEDEC TO-252AA -r = 0.063, V = 10V GS DS(ON) DRAIN -r = 0.071, V = 5V GS DS(ON) (FLANGE) Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Peak Current vs Pulse Width Curve UIS Rating Curve Symbol Switching Time vs R Curves GS D Ordering Information G PART NUMBER PACKAGE BRAND RFD12N06RLE SM9A TO-25 2AA 12N6LE S o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C RFD12N06RLESM 9A UNITS Drain to Source Voltage (Note 1) . V 60 V DSS Drain to Gate Voltage (R = 20k ) (Note 1) V 60 V GS DGR Gate to Source Voltage . V 16 V GS Drain Current o Continuous (T = 25 C, V = 5V) I 17 A C GS D o Continuous (T = 25 C, V = 10V) (Figure 2) . I 18 A C GS D o Continuous (T = 135 C, V = 5V) . I 8 A C GS D o Continuous (T = 135 C, V = 4.5V) (Figure 2) .I 8 A C GS D Pulsed Drain Current . I Figure 4 DM Pulsed Avalanche Rating . UIS Figures 6, 17, 18 Power Dissipation P 49 W D o o Derate Above 25 C . 0.327 W/ C o Operating and Storage Temperature . T , T -55 to 175 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s T 300 C L o Package Body for 10s, See Techbrief TB334 .T 260 C pkg NOTE: o o 1. T = 25 C to 150 C. J CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. 2002 Fairchild Semiconductor Corporation RFD12N06RLESM 9A Rev. C0