CXDM1002N SURFACE MOUNT SILICON www.centralsemi.com N-CHANNEL DESCRIPTION: ENHANCEMENT-MODE The CENTRAL SEMICONDUCTOR CXDM1002N is MOSFET a high voltage silicon N-Channel enhancement-mode MOSFET designed for high speed pulsed amplifier and driver applications. This MOSFET offers high voltage, low r , low threshold voltage, and low leakage DS(ON) current. MARKING: FULL PART NUMBER SOT-89 CASE FEATURES: Low r (140m TYP V =4.5V) DS(ON) GS APPLICATIONS: High voltage (V =100V) Load/Power switches DS Logic level compatibility Power supply converter circuits Battery powered portable equipment 2kV ESD protection MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 100 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current (Steady State) I 2.0 A D Maximum Pulsed Drain Current, tp=10s I 7.0 A DM Power Dissipation P 1.2 W D Operating and Storage Junction Temperature T , T -55 to +150 C J stg Thermal Resistance 104 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =20V, V=0 100 nA GSSF GSSR GS DS I V =100V, V=0 100 nA DSS DS GS BV V =0, I=250A 100 V DSS GS D V V =V , I=250A 1.5 2.1 2.5 V GS(th) GS DS D V V =0, I=1.0A 1.1 V SD GS S r V =10V, I=2.0A 125 300 m DS(ON) GS D r V =4.5V, I=1.0A 140 350 m DS(ON) GS D C V =25V, V =0, f=1.0MHz 48 pF rss DS GS C V =25V, V =0, f=1.0MHz 550 pF iss DS GS C V =25V, V =0, f=1.0MHz 45 pF oss DS GS Q V =80V, V =5.0V, I=2.0A 6.0 nC g(tot) DS GS D Q V =80V, V =5.0V, I=2.0A 1.2 nC gs DS GS D Q V =80V, V =5.0V, I=2.0A 3.0 nC gd DS GS D t V =50V, V =5.0V, I=3.5A 32 ns on DD GS D t R=4.7 50 ns off G R1 (19-March 2013)CXDM1002N SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET SOT-89 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Drain 3) Source MARKING: FULL PART NUMBER R1 (19-March 2013) www.centralsemi.com