4V Drive Nch MOSFET RHU002N06 Structure Dimensions (Unit : mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.2 0.7 0.3 ( ) 3 Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abbreviated symbol : KP 6) Parallel use is easy. (3) Drain Applications Switching Packaging specifications Equivalent circuit (3) Package Taping Code T106 Basic ordering unit (pieces) Type 3000 RHU002N06 (2) 2 1 Absolute maximum ratings (Ta=25C) (1) Source (1) (2) Gate 1 ESD PROTECTION DIODE (3) Drain 2 BODY DIODE Parameter Symbol Limits Unit A protection diode has been built in between the VDSS 60 V Drain-source voltage gate and the source to protect against static electricity when the product is in use. Gate-source voltage VGSS 20 V Use the protection circuit when fixed voltages are Continuous ID 200 mA exceeded. Drain current 1 Pulsed IDP 800 mA Continuous IS 200 mA Source current (Body diode) 1 Pulsed ISP 800 mA 2 Total power dissipation PD 200 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended Thermal resistance Parameter Symbol Limits Unit Channel to ambient Rth (ch-a) 625 C / W With each pin mounted on the recommended land. www.rohm.com 2012.05 - Rev.C 1/3 c 2012 ROHM Co., Ltd. All rights reserved. 1.25 2.1 0.1Min. RHU002N06 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Test Conditions IGSS 10 A VGS=20V, VDS=0V Gate leakage current V (BR) DSS 60 V ID=1mA, VGS=0V Drain-source breakdown voltage IDSS 1 A VDS=60V, VGS=0V Drain cutoff current VGS (th) 1 2.5 V VDS=10V, ID=1mA Gate threshold voltage 1.7 2.4 ID=200mA, VGS=10V Drain-source on-state resistance RDS (on) 2.8 4.0 ID=200mA, VGS=4V 0.1 S VDS=10V, ID=200mA Forward transfer admittance l Yfs l Ciss 15 pF Input capacitance VDS=10V Coss 8 pF VGS=0V Output capacitance f=1MHz Crss 4 pF Reverse transfer capacitance td (on) 6 ns Turn-on delay time ID=100mA, VDD 30V tr 5 ns Rise time VGS=10V RL=300 td (off) 12 ns Turn-off delay time RG=10 95 ns Fall time tf 2.2 4.4 nC Qg Total gate charge VDD 30V 0.6 nC VGS=10V Qgs Gate-source charge ID=200mA 0.3 nC Qgd Gate-drain charge Pulsed Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V IS=200mA, VGS=0V Pulsed Electrical characteristic curves 0.8 1 2.5 VDS=10V VDS=10V 10V Ta=25C Pulsed ID=1mA 0.7 Pulsed Pulsed 8V 6V 2.0 0.6 0.1 0.5 Ta=25C 1.5 4V 25C 0.4 75C 125C 1.0 0.3 3.5V 0.01 0.2 0.5 VGS=3V 0.1 0.0 0.001 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 50 25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.3 Gate Threshold Voltage Fig.2 Typical Transfer Characteristics Fig.1 Typical Output Characteristics vs. Channel Temperature 10 10 7 VGS=10V VGS=4V Ta=25C Pulsed Pulsed Pulsed 6 Ta=125C 75C Ta=125C 5 25C 75C 25C 25C 25C 4 ID=200mA 3 2 100mA 1 1.0 1.0 0 0.01 0.1 1.0 0.01 0.1 1.0 0 5 10 15 20 DRAIN CURRENT : I D (A) DRAIN CURRENT : I D (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) Resistance vs. Drain Current ( ) Resistance vs. Gate-Source Voltage www.rohm.com 2012.05 - Rev.C 2/3 c 2012 ROHM Co., Ltd. All rights reserved. STATIC DRAIN-SOURCE DRAIN CURRENT : ID (A) ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE DRAIN CURRENT : ID (A) ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE GATE THRESHOLD VOLTAGE : VGS (th) (V) ON-STATE RESISTANCE : RDS (on) ()