Data Sheet 4.5V Drive Nch MOSFET RMW200N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET PSOP8 (8) (7) (6) (5) Features 0~0.1 1) High Power package(PSOP8). 2) High-speed switching,Low On-resistance. 1pin mark (1) (2) (3) (4) 0.22 0.4 3) Low voltage drive(4.5V drive). 0.9 1.27 5.0 Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TB Basic ordering unit (pieces) 2500 RMW200N03 (1) Source (2) Source 2 (3) Source (4) Gate 1 (5) Drain Absolute maximum ratings (Ta = 25 C) (6) Drain (7) Drain Parameter Symbol Limits Unit (1) (2) (3) (4) (8) Drain Drain-source voltage V 30 V DSS 1 ESD PROTECTION DIODE 2 BODY DIODE Gate-source voltage V 20 V GSS Continuous I 20 A D Drain current *1 Pulsed I 80 A DP Continuous I 2.5 A Source current S *1 (Body Diode) Pulsed I 80 A SP *2 Power dissipation P 3.0 W D Channel temperature Tch 150 C Range of storage temperature Tstg 55 to 150 C *1 Pw10s, Duty cycle1% *2 MOUNTED ON 40mm 40mm Cu BOARD Thermal resistance Parameter Symbol Limits Unit * Channel to Ambient Rth (ch-a) 41.7 C / W * MOUNTED ON 40mm 40mm Cu BOARD www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.A 1/6 5.0 0.5 0.5 6.0Data Sheet RMW200N03 Electrical characteristics (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =20V, V =0V GSS GS DS Drain-source breakdown voltage V 30 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =30V, V =0V DSS DS GS Gate threshold voltage V 1.0 - 2.5 V V =10V, I =1mA GS (th) DS D - 3.0 4.2 I =20A, V =10V Static drain-source on-state D GS R * m DS (on) resistance - 4.0 5.6 I =20A, V =4.5V D GS ** Forward transfer admittance l Y l20 - - S I =20A, V =10V fs D DS Input capacitance C - 1780 - pF V =15V iss DS Output capacitance C - 580 - pF V =0V oss GS Reverse transfer capacitance C - 210 - pF f=1MHz rss Turn-on delay time t - 18 - ns I =10A, V 15V ** d(on) D DD Rise time t - 50 - ns V =10V ** r GS Turn-off delay time t - 60 - ns R =1.5 d(off)** L Fall time t ** - 20 - ns R =10 f G Total gate charge Q ** - 29 - nC I =20A, V 15V g D DD Gate-source charge Q ** - 5.7 - nC V =10V gs GS Gate-drain charge Q - 5.5 - nC ** gd *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =2.5A, V =0V SD s GS *Pulsed www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.03 - Rev.A