RN142VTE-17 ROHM

RN142V Diodes PIN diode RN142V z Applications z External dimensions (Unit : mm) z Land size figure (Unit : mm) High frequency switching 1.250.1 0.10.1 0.05 0.9MIN. z Features 1) Small mold type. (UMD2) 2) Low high-frequency forward resistance / low capacitance (CT). UMD2 z Construction z Structure 0.70.2 Silicon epitaxial planar 0.30.05 0.1 ROHM : UMD2 JEDEC : S0D-323 JEITA : SC-90/A dot (year week factory) z Taping dimensions (Unit : mm) 1.550.05 0.30.1 2.00.05 4.00.1 1.400.1 4.00.1 1.05 1.00.1 z Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage V 60 V R Reverse current I 100 mA F Junction temperature Tj 150 Storage temperature -55 to +150 Tstg z Electrical characteristics (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V -- 1 V I =10mA F F Reverse current I -- 0.1 A V =60V R R Capacitance between terminals Ct - - 0.45 pF V =1V , f=1MHz R High frequeny switching I =3mA,f=100MHz Rf - - 3 F 1/2 1.70.1 2.50.2 3.50.05 1.750.1 2.75 0.8MIN. 8.00.2 2.80.1 2.1RN142V Diodes z Electrical characteristic curves (Ta=25C) 10 100 1000 Ta=150 f=1MHz Ta=125 100 Ta=150 10 1 Ta=125 Ta=75 10 Ta=25 Ta=75 1 Ta=25 Ta=-25 1 0.1 Ta=-25 0.1 0.1 0.01 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 010 20 30 0 10 2030 405060 70 80 FORWARD VOLTAGEVF(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS 1 850 100 Ta=25 Ta=25 VR=0V IF=10mA f=1MHz f=10MHz 840 n=30pcs 10 830 f=100MHz 820 1 810 AVE:825.4mV 0.1 0.1 800 0.1 1 10 1 10 100 1000 FORWARD CURRENT:IF(mA) FREQUENCY(MHz) VF DISPERSION MAP rf-IF CHARACTERISTICS Ct-f CHARACTERISTICS 1 10 2 Ta=25 Ta=25 Ta=25 9 0.9 1.9 f=1MHz f=100MHz VR=60V 8 0.8 VR=1V 1.8 IF=3mA n=30pcs n=10pcs n=10pcs 7 0.7 1.7 0.6 6 1.6 5 0.5 1.5 AVE:1.206 4 0.4 1.4 AVE:0.4448nA 3 0.3 1.3 0.2 2 1.2 AVE:0.364pF 1 0.1 1.1 0 0 1 FORWARD CURRENT:IF(mA) IR DISPERSION MAP Ct DISPERSION MAP rf DISPERSION MAP 1 5 Ta=25 0.9 f=100MHz 0.8 4 IF=10mA n=10pcs 0.7 AVE:2.01kV 0.6 3 0.5 0.4 2 AVE:0.71kV 0.3 0.2 1 AVE:0.639 0.1 C=200pF C=100pF 0 0 R=0 R=1.5k FORWARD CURRENT:IF(mA) ESD DISPERSION MAP rf DISPERSION MAP 2/2 FORWARD OPERATING FORWARD OPERATING FORWARD CURRENT:IF(mA) RESISTANCE:rf() REVERSE CURRENT:IR(nA) RESISTANCE:rf() CAPACITANCE BETWEEN CAPACITANCE BETWEEN REVERSE CURRENT:IR(nA) ELECTROSTATIC TERMINALS:Ct(pF) TERMINALS:Ct(pF) DISCHARGE TEST ESD(KV) FORWARD OPERATING FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN RESISTANCE:rf() TERMINALS:Ct(pF)