MA44781 MACOM

MA44781 Dual Pair Anti-Parallel Non-Magnetic PIN Diode Rev. V5 Features Schematic Designed for MRI Applications Anti-Parallel Self Bias Arrangement Non-Magnetic Surface Mount Package SPC Process for Superior Parametric Repeatability RoHS* Compliant and 260C Reflow Compatible Description The MA44781 device acts as a passive switch using silicon PIN diodes in a surface mount package. There are two sets of two PIN diode pairs constructed in opposing configurations. The package is sealed with a non-conductive epoxy resin and is suitable for surface mount applications. Internal Construction The MA44781 device is well suited for MRI passive switching applications. The PIN diodes become a high Q, R-C network under small signal and behave as an effective passive rectifier or short circuit under high RF signal to tune and de-tune the resonant MRI tank circuit. The anti-parallel doublet arrangement provides for more efficient RF power handling. Case Style 1134 Ordering Information Part Number Package MA44781 ODS-1134 * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA44781 Dual Pair Anti-Parallel Non-Magnetic PIN Diode Rev. V5 Electrical Specifications: T = +25C, Breakdown Voltage I = 10 A, V = 60 V Minimum A R b Parameter Test Conditions Units Min. Typ. Max. Forward Voltage I = 20 A V 0.500 0.780 F Delta Forward Voltage I = 20 A (between each diodes) mV +/- 30 F Junction Capacitance f = 1 MHz, V = -6.0 V pF 0.15 0.50 R (per diode) Total Capacitance V = 0 V pF 1.5 3.5 R 1 Absolute Maximum Ratings Parameter Absolute Maximum Handling Procedures Please observe the following precautions to avoid Reverse Voltage 60 V damage: Forward Current 2 A 2 (Per Diode Pair) Static Sensitivity 3 These electronic devices are sensitive to Total Power Dissipation 2 W electrostatic discharge (ESD) and can be damaged Operating Temperature -55C to +125C by static electricity. Proper ESD control techniques should be used when handling these devices. Storage Temperature -55C to +125C Junction Temperature +175C 1. Operation of this device above any one of these parameters may cause permanent damage. 2. Total current per diode= I (rms) + I (dc) +25C 3. Please refer to application note M538 for surface mounting instructions. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: