UM6002B Microchip

WWW.Microsemi .COM UUMM66000000//UUMM6622000000//UUMM66660000 UM6000 / UM6200/UM6600 POWER PIN DIODES KEY FEATURES DESCRIPTION Voltage ratings to 1000V These series of PIN diodes are designed for used successfully in switches in which low applications requiring small package size insertion loss at low bias current is required. Average power dissipation to 6 W and moderate average power handling The A style package for this series is the capability. The low capacitance of the smallest Microsemi PIN diode package. It has Series resistance as low as 0.4 UM6000 and UM6600 allows them to be been used successfully in many microwave used as series switching elements to 1 GHz. applications using coaxial, microstrip, and Carrier lifetime greater than 1.0 s The low resistance of the UM6200 is useful stripline techniques at frequencies beyond X- in applications where forward bias current Band. The B and E style leaded packages Non cavity design must be minimized. offer the highest available power dissipation for a Thermally matched configuration Because of its thick I-region width and long package this small. They have been used lifetime the UM6000 and UM6600 have extensively as series switch elements in Low capacitance at 0 V bias been used in distortion sensitive and high microstrip circuits. The C style package peak power applications, including receiver duplicates the physical outline available in Low conductance at 0 V bias protectors, TACN, and IFF equipment. conventional ceramic-metal packages but Their low capacitance allows them to be incorporates the many reliability advantages of Compatible with automatic insertion useful as attenuator diodes at frequencies the Microsemi construction. equipment greater than 1 GHz. The UM6200 has been IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM ELECTRICALS ELECTRICALS UM6000 / UM6200/UM6600 POWER PIN DIODES ELECTRICAL PARAMETERS 25 C (unless otherwise specified) Parameter Symbol Conditions UM6600 UM6000 UM6200 Units Reverse Current (Max) 10 10 I At rated voltage 10 R uA Series Resistance(Max) R If = 100 mA, F= 100 MHz 2.5 1.7 0.4 Ohms S Capacitance (Max) C V = 100 V, F = 1 MH 0.4 0.5 1.1 pF T R Z V = 100 V, F = 100 MHz 300k Parallel Resistance(Min) Rp 300k 350k Ohms R Carrier Lifetime(Min) I = 10 mA 1.0 1.0 0.6 us F I-Region Width (Min) W - 150 150 40 um Style B Style SM UM6000/UM6200/UM6600 Rs versus If f = 100 MHz 5 10 4 10 3 10 UM6600 2 10 UM6000 UM6200 1 10 0 10 -1 10 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 If (A) Copyright 2005 Microsemi Page 2 Rev. 0, 2006-03-13 Rs (Ohms)