BAP64-04W,BAP64-05W,BAP64-06W Features Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) General Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Purpose Pin Diodes Low Diode Capacitance 200mW Low Diode Forward Resistance Halogen Free. Green Device (Note 1) Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 625C/W Junction to Ambient SOT-323 Symbol Parameter Limits Unit Continuous Reverse Voltage V R 175 V A D I mA Forward Current 100 F o P 200 mW Power Dissipation(T =90 C) A D C B MCC F E Device Marking Part Number H J G BAP64-04 W 4W K BAP64-05 W 5W L BAP64-06 W 6W DIMENSIONS INCHES MM DIM NOTE Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, MIN MAX MIN MAX <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. A 0.071 0.087 1.80 2.20 B 0.045 0.053 1.15 1.35 C 0.083 0.096 2.10 2.45 0.026 0.65 D TYP. E 0.047 0.055 1.20 1.40 F 0.012 0.016 0.30 0.40 G 0.000 0.004 0.00 0.10 Pin Configuration H 0.035 0.044 0.90 1.10 J 0.002 0.010 0.05 0.25 K 0.006 0.016 0.15 0.40 L 0.010 0.018 0.26 0.46 4VHHFTUFE 4PMEFS 1BE -BZPVU BAP64-04W BAP64-05W BAP64-06W 0.70 (mm) 0.90 1.90 0.65 0.65 Rev.3-3-1212020 1/4 MCCSEMI.COMBAP64-04W,BAP64-05W,BAP64-06W Electrical Characteristics 25C Unless Otherwise Specified Symbol Paramete r M i n . Typ M ax . Conditions 10A V =175V R Reverse Voltage Leakage Current I R 1.0A V =20V R V Forward Voltage 1.1V I =50mA F F Cd1 0.52pF V =0V,f=1MHz R Cd2 0.37pF 0.5pF V =1V,f=1MHz Diode Capacitance R Cd3 0.23pF 0.35pF V =20V,f=1MHz R RD1 20 40 I =0.5mA, f=100MHz F 10 20 I =1.0mA, f=100MHz RD2 Diode Forward Resistance F RD3 2.0 3.8 I =10mA, f=100MHz F RD4 0.7 1.35 I =100mA, f=100MHz F When switched from =10mA to II =6mA F R Charge carrier life time T 1.55S L R =100 measured at I =3mA L R Series inductance BAP64-04W/06W 1. 6nH L I =100mA,f=100MHz F S BAP64-05W 1.4nH Rev.3-3-1212020 2/4 MCCSEMI.COM