JDP2S08SC(TPL3) Toshiba

JDP2S08SC TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S08SC Unit:mm UHF~VHF Band RF Switch Applications Suitable for reducing sets size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: r = 1.0 (typ.) s Low capacitance: C = 0.21 pF (typ.) T 0.2 70.02 0.3 20.03 0.025 0 .015 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit C a th o d e A n o de Reverse voltage V 30 V R Forward current I 50 mA F Junction temperature T 150 C SC2 j Storage temperature range T 55~150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 1-1R1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.00017 g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 10 A 30 V R R Reverse current I V = 30 V 0.1 A R R Forward voltage V I = 50 mA 0.89 0.95 V F F Capacitance(Note2) C V = 1 V, f = 1 MHz 0.21 0.4 pF T R Series resistance r I = 10 mA, f = 100 MHz 1.0 1.5 s F Note1: Signal level when capacitance is measured. V = 100 mVrms sig Marking Cathode Part Mark 1 2007-11-01 0.3 0.03 0.62 0.03 0.38 0.19 0.02 0.19 0.02 0.025 0.015JDP2S08SC CT-VR 1 f=1MHz 0.1 01 234 56 VR(V) rs-IF 10 f=100MHz 1 0.1 IF( m A) 110 2 2007-11-01 CT(pF) rs(ohm)