HSMP-3866 Quad PIN Diode Pi Attenuator 300 kHz to 3 GHz in SOT 25 Package Data Sheet Description Features Avago Technologys HSMP-3866 is a wideband, low 4 PIN Diodes ina SOT-25 package insertion loss, low current, Quad PIN Diode Pi Attenuator 300 kHz to3 GHz usable frequencyband in a low cost surface mount SOT-25 package. It provides a Low Current good match and flat attenuation over an extremely wide band from 300kH z to 3 GHz. Lowinser tionL oss MSL-1 and Lead-free The SOT-25 packages gives a reduction in part count and takes up less space on board compared to multi package Tape& R eel packaging option available solutions. Specification At 1 GHz, V+=1.2V Four PIN Diodes in one package encourages performance repeatability for improved production yield at board IIP3 = 30 dBm (Typical) level. Attenuation = 36dB (Typical) Insertion Loss =-2.5 dB (Typical) Package Marking and Pin connections ReturnL oss = -18 dB (Typical) 3 2 1 Application Note: Broadband system application (i.e., CATV, WCDMA, etc) Package markingpr ovides orientation andiden tification General purpose Voltage-Control-Attenuator for low BT= Device Code BTx current applications. x= Month code indicates the month of manufacture 5 4 Pin 2 : Pin 3 : Pin 1 : Series RF In/Out RF In/Out Bias Pin 5 : Pin 4 : Shunt Shunt Bias Bias 1 Absolute Max Ratings , Tc = +25C Symbol Parameter Unit Abs Max I ForwardC urrent (1 sP ulse) Amp 1 f P Peak Inverse Voltage V 50 IV T Junction Temperature C 150 j T Storage Temperature C -65t o 150 stg 2 q Thermal Resistance C/W 167 jb Notes : 1. Operation in excess of any one of these conditions may resultin permanentdamage to the device. 2. Thermal Resistance ismeasur ed from junction to board using IR method. Electrical Specifications, Tc = +25C (Each Diode) Minimum Breakdown Voltage Typical Series Resistance Typical Total Capacitance V (V) R (W) C (pF) BR S T 50 3.0/1.5* 0.22 Test Condition V = V I = 10 mA, f =100 MH z V =50 V R BR F R Measure I 10 A I = 100mA* f = 1 MHz R F Typical Performance, Tc = +25C (Each Diode) Total Resistance Carrier Lifetime Reverse Recovery Time Total Capacitance R (W) t(ns) T (ns) C (pF) T rr T 22 500 80 0.22 Test Condition I = 1 mA I =10mA V = 50 V V =50V F F R R f = 1 MHz I =250 mA I = 10mA f = 1MHz R F 90% Recovery Typical Performance for HSMP-3866 Quad PIN Diode Attenuator +25C Parameter Test Condition Units Typical Insertion Loss Vc = 5V, V+= 1.2V, Freq = 1 GHz dB -2.5 Return Loss Vc = 0V, V+ = 1.2V, Freq = 1GH z dB -18 Attenuation Vc =0V , V+ = 1.2V, Freq =1 GHz dB 36 IP3 Vc = 1.5V, V+ = 1.2V, Freq = 1GH z dBm 30 IP3 Vc = 5.0V, V+ =1.2V , Freq = 1 GHz dBm 40 IP3 Vc = 1.5V, V+ = 1.2V, Freq = 300 MHz dBm 25 IP3 Vc =5.0V , V+ = 1.2V, Freq= 300 MHz dBm 37 IP3 Vc = 1.5V, V+ = 1.2V, Freq =100 MHz dBm 23 IP3 Vc = 5.0V, V+ =1.2V , Freq = 100 MHz dBm 35 Notes : 1. Measurement above obtained using Wideband RF circuit design shown in Figure 1& 2 2