X-On Electronics has gained recognition as a prominent supplier of GC4742-42 PIN Diodes across the USA, India, Europe, Australia, and various other global locations. GC4742-42 PIN Diodes are a product manufactured by Microchip. We provide cost-effective solutions for PIN Diodes, ensuring timely deliveries around the world.

GC4742-42 Microchip

GC4742-42 electronic component of Microchip
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Part No.GC4742-42
Manufacturer: Microchip
Category: PIN Diodes
Description: Microchip Technology Limiter - Pkgd
Datasheet: GC4742-42 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 47.278 ea
Line Total: USD 47.28 
Availability - 1
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 47.278

   
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We are delighted to provide the GC4742-42 from our PIN Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GC4742-42 and other electronic components in the PIN Diodes category and beyond.

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www.MICROSEMI.com GC4701 - GC4750 GC4701 - GC4750 CONTROL DEVICES LIMITER DIODES TM RoHS Compliant KEY FEATURES 0DESCRIPTION B Available as packaged devices or The GC4700 series diodes are specially processed PIN diodes designed as chips for hybrid applications for use in passive or active limiters at frequencies through Ku band. Thirteen categories of devices are offered for flexibility in design of low, Low Loss medium and high power limiters. Low VB limiters have thinner I regions for faster turn-on time and better Suitable for applications to flat leakage. Microsemi also manufactures gold doped limiters for fastest 18Ghz turn on time. In addition, we manufacture high voltage dual junction limiters for superior peak and CW power handling. Excellent flat leakage performance This series of diodes meets RoHS requirements per EU Directive Low 1 dB compression point 2002/95/EC. Gold Doped Diodes for Fast Turn On 1 RoHS Compliant APPLICATIONS 1 Most or our devices are supplied with A diode limiter is a power-sensitive variable attenuator that uses the non-linear Gold plated terminations. Other properties of the diode to provide an impedance mismatch when sufficient amounts terminal finishes are available on of RF power are incident on the device. The output power is reduced to a level that request. Consult factory for details. will not overdrive a receiver, burn out a mixer, etc. For varying input power levels in excess of the diodes threshold level, the limiters output power tends to remain constant. APPLICATIONS/BENEFITS A passive limiter is one in which the limiter diodes are turned on by the RF signal itself. An active limiter is one in which the limiter diodes are turned on primarily by Receiver protection circuits an external bias current typically supplied by a Schottky detector diode which senses the incident signal. Amplifier Protection Since limiter diodes are not designed to dissipate large amounts of power, the limiter must reflect or divert the excess incident power back to the source or to another load (i.e. via a circulator, hybrid coupler, etc.). Limiter diodes may be used in wave guides, coax, microstrip, stripline or other media. Single or cascaded devices may be used, depending on power levels. ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Value Unit Maximum Leakage Current Ir 0.5 uA 80% of minimum Rated Vb Operating Temperature T op -55 to +150 C Storage Temperature T stg -65 to +150 C IMPORTANT: For the most current data, consult our website: HUwww.MICROSEMI.comU Specifications are subject to change, consult the factory for further information. These devices are ESD sensitive and must be handled using ESD precautions. Microsemi Page 1 Copyright 2006 Microwave Products Rev: 2009-01-19 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 www.MICROSEMI.com ELECTRICALS GC4701 - GC4750 CONTROL DEVICES LIMITER DIODES TM RoHS Compliant CHIP ELECTRICAL PARAMETERS 25C (unless otherwise specified) 1 2 P P V C C C R T b j0 j-6 j-50 s L (Typ) (Max) Model (Min) (Typ) (Max) (Max) (Typ) (Typ) THERMAL THERMAL I =10 A 0V -6V -50V 10 mA RESISTANCE RESISTANCE R (Volts) (pF) (pF) (pF) () (ns) (C/W) (C/W) GC4701-00 20 0.20 0.15 - - 1.5 5 20 100 GC4702-00 20 0.50 0.30 - - 1.2 10 12 80 GC4711-00 45 0.20 0.15 - - 1.5 10 15 80 GC4712-00 45 0.50 0.30 - - 1.2 15 10 60 GC4713-00 45 0.70 0.50 - - 1.0 20 6 40 GC4721-00 120 0.20 0.15 - - 1.5 50 1.2 40 GC4722-00 120 0.60 0.30 - - 1.0 50 0.5 20 GC4723-00 120 0.80 0.50 - - 0.5 100 0.3 15 GC4731-00 15 0.12 0.10 - - 2.0 5 30 120 GC4732-00 15 0.20 0.15 - - 1.5 5 20 80 GC4741-00 30 0.12 0.10 - - 2.0 7 20 100 GC4742-00 30 0.20 0.15 - - 1.5 7 15 70 (3) (4) GC4750-002 250 - - - - 0.25 3.0 50mA 300 4 10 TYPICAL RF PERFORMANCE 25C (unless otherwise specified) PEAK POWER TYPICAL TYPICAL TYPICAL MAXIMUM P LEAKAGE THRESHOLD INS. LOSS CW POWER IN V b Model 1 S P I out L (Min) Number (Watts) (dBm) (dBm) (dBm) (dB) GC4701 20 +50 +22 +10 0.1 2 GC4702 20 +53 +24 +10 0.2 3 GC4711 45 +53 +27 +15 0.1 3 GC4712 45 +56 +29 +15 0.2 4 GC4713 45 +59 +31 +15 0.2 5 GC4721 120 +60 +39 +20 0.1 5 GC4722 120 +63 +41 +20 0.2 10 GC4723 120 +66 +44 +20 0.2 15 GC4731 15 +47 +19 +7 0.1 2 GC4732 15 +50 +22 +4 0.1 3 GC4741 30 +47 +24 +12 0.1 3 GC4742 30 +50 +27 +12 0.1 4 GC4750 250 +56 10uS +44 +31 0.2 50 Notes 1) Pulse length 1 microsecond. 2) As measured in style 30 package 3) Available in 002 style or 115-2 package styles 4) C for 2 junctions in parallel V =50V J R Microsemi Page 2 Copyright 2006 Microwave Products Rev: 2009-01-19 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

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8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

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