JDP2S02ACT(TPL3) Toshiba

JDP2S02ACT TOSHIBA Diode Silicon Epitaxial PIN Type JDP2S02ACT Unit: mm UHF~VHF Band RF Switch Applications Suitable for reducing sets size as a result from enabling high-density mounting due to 2-pin small packages. Low series resistance: r = 1.0 (typ.) s Low capacitance: C = 0.3 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 30 V R Forward current I 50 mA F Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 1-1P1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating Weight: 0.00077g (typ.) temperature/current/voltage, etc.) are within the absolute maximum ratings. CST2 Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 10 A 30 V R R Reverse current I V = 30 V 0.1 A R R Forward voltage V I = 50 mA 0.9 0.94 V F F Capacitance(Note2) C V = 1 V, f = 1 MHz 0.3 0.4 pF T R Series resistance r I = 10 mA, f = 100 MHz 1.0 1.5 s F Note1: Signal level when capacitance is measured. V = 100 mVrms sig Marking Cathode Part Number 02 Start of commercial production 2003-11 1 2014-03-01 JDP2S02ACT Note2: This package has 2 exposed electrodes on each side because of the manufacturing process. Please be careful about the handling enough. electrode 2 2014-03-01