MA4GP905 GaAs Beamlead PIN Diode Rev. V5 Features Low Series Resistance Low Capacitance Millimeter Wave Switching Millimeter Wave Cutoff Frequency 3 ns Switching Speed Can be Driven by a Buffered +5 V TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Description The MA4GP905 is a Gallium-Arsenide, beam-lead PIN diode. These devices are fabricated on a OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diode exhibits low series resistance of 3 , low capacitance of 25 fF, and an extremely fast switching speed of 3 ns. It is fully passivated with silicon nitride and has an additional polymer layer for scratch protection. This protective coating prevents damage to the junction and anode air bridge during handling and assembly. Ordering Information Applications The ultra low capacitance of the MA4GP905 device Part Number Packaging makes it ideally suited for use through W-band. The low RC product and low profile of the beamlead PIN MA4GP905 Gel Pak diode allows for use in microwave, millimeter wave, switch designs, where low insertion loss and high isolation are required. The operating bias conditions of +20 mA for the low loss state, and 0 V, for the isolation state permits the use of a simple +5 V TTL gate driver. GaAs, beamlead diodes, can be used in switching arrays on radar systems, high speed ECM circuits, optical switching networks, instrumentation, and other wideband multi-throw switch assemblies. 1 11 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: htt p s:// ww w.m a com . com / su p por t DC-0007018 MA4GP905 GaAs Beamlead PIN Diode Rev. V5 Electrical Specifications: T = 25C A Parameter Test Conditions Units Min. Typ. Max. Total Capacitance (C ) 10 V, 1 MHz fF 25 30 T Forward Resistance (R ) 20 mA, 1 GHz 3.0 4.9 S Forward Voltage (V ) 10 mA V 1.2 1.36 1.5 F Leakage Current (I ) -50 V nA 50 300 R Lifetime (T ) ns 2 10 L Absolute Maximum Ratings: T = 25C A (unless otherwise specified) Parameter Absolute Maximum Reverse Voltage -50 V Forward DC Current 40 mA C.W. Incident Power +20 dBm Junction Temperature +175C Operating Temperature -65C to +125C Storage Temperature -65C to +150C Mounting Temperature +235C for 10 seconds 2 22 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: htt p s:// ww w.m a com . com / su p por t DC-0007018