MA4FCP200 MACOM

MA4FCP200 Flip Chip PIN Diode Rev. V5 Features 1264 Outline Low Series Resistance Low Capacitance Fast Switching Speed Silicon Nitride Passivation Polymer Scratch Protection RoHS Compliant Description The MA4FCP200 is a silicon flip chip PIN diode fabricated using MACOMs HMIC process which provides for repeatable electrical characteristics. This diode is fabricated on epitaxial wafers using a process designed for extremely low parasitics. The diode is fully passivated with silicon nitride to minimize leakage current. The chip also has an additional polymer layer for impact and scratch protection to prevent damage to the active area during handling. Applications The small outline and low 0.05pS RC product, make the device useful in multi-throw switches and switched phase shifter circuits requiring <20nS switching Backside metal contacts: 0.1 m thick gold. speeds at operating frequencies up to 18GHz. Yellow hatched areas indicate backside, mounting, ohmic, gold contacts. 1 Inches Millimeters Absolute Maximum Ratings Dim. T = +25C (unless otherwise specified) AMB Min. Max. Min. Max. Parameter Absolute Maximum A 0.014 0.015 0.356 0.381 B 0.008 0.009 0.203 0.229 Forward Current 100mA C 0.004 0.005 0.102 0.127 Reverse Voltage - 70V D 0.003 0.004 0.076 0.102 Operating Temperature - 55C to + 125C E 0.002 0.003 0.175 0.225 Storage Temperature - 55C to + 150C F 0.008 0.010 0.203 0.254 Dissipated Power 100mW RF plus DC G 0.004 0.006 0.102 0.152 Mounting Temperature +300C for 10 seconds 1. Exceeding any of these limits may cause permanent damage to the chip. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4FCP200 Flip Chip PIN Diode Rev. V5 Electrical Specifications T +25C AMB Parameters Conditions Symbol Units Min. Typ. Max. 1 Total Capacitance -40V, 1MHz C pF 0.025 0.030 T 1,3 Total Capacitance -40V, 1GHz C pF 0.020 T 2,3 Series Resistance +50mA , 100MHz R 2.4 3.0 S 2,3 Series Resistance +50mA , 1GHz R 2.8 S Forward Voltage +100mA V V 1.25 1.5 F Reverse Voltage -10 A V V -70 R A Reverse Current -70V I -10 R Lifetime I = +10mA / I = -6mA T nS 100 F REV L 4 Steady State Thermal Resistance C/W 900 1. Total capacitance is equivalent to the sum of junction capacitance, Cj, plus the die parasitic capacitance, Cp. 2. The series resistance, R is equal to the total diode resistance which also includes the resistance of the S, junction, Rj. 3. Rs and Cp measured on an HP4291A with die mounted in an ODS-186 package. 4. Steady-state Thermal Resistance measured with die mounted in an ODS-186 package. 186 ESD These devices very susceptible to ESD and are rated Class 0 (0-199V) per HBM MIL-STD-883, method 3015.7 C = 100pF 10%, R = 1.5kW 1% . Even though die survived ESD testing to 100V , they should be handled in a static free environment. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: