D1014UK TT Electronics

TetraFET D1014UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED C MULTI-PURPOSE SILICON N (typ) 2 1 DMOS RF FET B A 40W 28V 500MHz 3 D (2 pls) SINGLE ENDED F (2 pls) H J FEATURES SIMPLIFIED AMPLIFIER DESIGN M E K I G SUITABLE FOR BROAD BAND APPLICATIONS DP LOW C rss PIN 1 SOURCE PIN 2 DRAIN PIN 3 GATE USEFUL P AT 1GHz O LOW NOISE DIM mm Tol. Inches Tol. A 16.51 0.25 0.650 0.010 B 6.35 0.13 0.250 0.005 HIGH GAIN 12 dB MINIMUM C 45 5 45 5 D 3.30 0.13 0.130 0.005 E 18.92 0.08 0.745 0.003 F 1.52 0.13 0.060 0.005 G 2.16 0.13 0.085 0.005 APPLICATIONS H 14.22 0.08 0.560 0.003 I 1.52 0.13 0.060 0.005 HF/VHF/UHF COMMUNICATIONS J 6.35 0.13 0.250 0.005 from 1 MHz to 500 MHz K 0.13 0.03 0.005 0.001 M 5.08 0.51 0.200 0.020 N 1.27 x 45 0.13 0.050 x 45 0.005 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 87.5W D BV Drain Source Breakdown Voltage 70V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 10A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 4049 E-mail: sales semelab.co.uk Website: D1014UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 100mA 70 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 28V V = 0 2 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 2A 1.6 S fs DS D G Common Source Power Gain P = 40W 12 dB PS O Drain Efficiency V = 28V I = 0.2A 50 % DS DQ VSWR Load Mismatch Tolerance f = 500MHz 20:1 C Input Capacitance V = 0 V = 5V f = 1MHz 120 pF iss DS GS C Output Capacitance V = 28V V = 0 f = 1MHz 60 pF oss DS GS C Reverse Transfer Capacitance V = 28V V = 0 f = 1MHz 5 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 2.0C / W THjcase Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 4049 E-mail: sales semelab.co.uk Website: