D2220UK TT Electronics

TetraFET D2220UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A N GOLD METALLISED 8 1 MULTI-PURPOSE SILICON D 7 2 C B P 6 3 DMOS RF FET 5 4 5W 12.5V 1GHz SINGLE ENDED H K M L FEATURES J E  SIMPLIFIED AMPLIFIER DESIGN FG SO8 PACKAGE  SUITABLE FOR BROAD BAND APPLICATIONS PIN 1 SOURCE PIN 5 SOURCE PIN 2 DRAIN PIN 6 GATE  VERY LOW C rss PIN 3 DRAIN PIN 7 GATE  SIMPLE BIAS CIRCUITS PIN 4 SOURCE PIN 8 SOURCE Dim. mm Tol. Inches Tol.  LOW NOISE A 4.06 0.08 0.160 0.003 B 5.08 0.08 0.200 0.003  HIGH GAIN 10 dB MINIMUM C 1.27 0.08 0.050 0.003 D 0.51 0.08 0.020 0.003 E 3.56 0.08 0.140 0.003 F 4.06 0.08 0.160 0.003 G 1.65 0.08 0.065 0.003 +0.25 +0.010 APPLICATIONS H 0.76 0.030 -0.00 -0.000 0.51 Min. 0.020 Min.  HF/VHF/UHF COMMUNICATIONS J 1.02 Max. 0.040 Max. from 1 MHz to 2 GHz K 45 Max. 45 Max. 0 Min. 0 Min. L 7 Max. 7 Max. M 0.20 0.08 0.008 0.003 N 2.18 Max. 0.086 Max. P 4.57 0.08 0.180 0.003 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 17.5W D BV Drain Source Breakdown Voltage 40V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 4A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 2685 Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Issue 1 E-mail: sales@semelab.co.uk Website: D2220UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit DrainSource BV V = 0 I = 10mA 40 V DSS GS D Breakdown Voltage Zero Gate Voltage I V = 12.5V V = 0 2 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 mA GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 0.5 7 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 0.4A 0.36 S fs DS D G Common Source Power Gain P = 5W 10 dB PS O h Drain Efficiency V = 12.5V I = 0.2A 40 % DS DQ VSWR Load Mismatch Tolerance f = 1GHz 20:1 C Input Capacitance V = 0V V = 5V f = 1MHz 24 pF iss DS GS C Output Capacitance V = 12.5V V = 0 f = 1MHz 20 pF oss DS GS C Reverse Transfer Capacitance V = 12.5V V = 0 f = 1MHz 2 pF rss DS GS * Pulse Test: Pulse Duration = 300 ms , Duty Cycle 2% THERMAL DATA R Thermal Resistance Junction Case Max. 6C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 2685 E-mail: sales@semelab.co.uk Website: