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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor
August 2016
2N7000 / 2N7002 / NDS7002A
N-Channel Enhancement Mode Field Effect Transistor
Description
Features
These N-channel enhancement mode field effect transis-
High Density Cell Design for Low R
DS(ON)
tors are produced using Fairchild's proprietary, high cell
Voltage Controlled Small Signal Switch
density, DMOS technology. These products have been
Rugged and Reliable
designed to minimize on-state resistance while providing
High Saturation Current Capability
rugged, reliable, and fast switching performance. They
can be used in most applications requiring up to 400 mA
DC and can deliver pulsed currents up to 2 A. These
products are particularly suited for low-voltage, low-cur-
rent applications, such as small servo motor control,
power MOSFET gate drivers, and other switching appli-
cations.
D
D
S
G
G
TO-92
1 SOT-23
(TO-236AB)
1. Source 2. Gate 3. Drain S
2N7002/NDS7002A
Ordering Information
Min Order Qty /
Part Number Marking Package Packing Method Immediate Pack
Qty
2N7000 2N7000 TO-92 3L Bulk 10000 / 1000
2N7000_D74Z 2N7000 TO-92 3L Ammo 2000 / 2000
2N7000_D75Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7000_D26Z 2N7000 TO-92 3L Tape and Reel 2000 / 2000
2N7002 702 SOT-23 3L Tape and Reel 3000 / 3000
NDS7002A 712 SOT-23 3L Tape and Reel 3000 / 3000
1998 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N7000 / 2N7002 / NDS7002A Rev. 2.10 1