M C C R Micro Commercial Components omponents 20736 Marilla Street Chatsworth MCCD200 7 Features Advanced trench MOSFET process technology Halogen free available upon request by adding suffix-H Dual N-Channel Epoxy meets UL 94 V-0 flammability rating Power MOSFET Moisture Sensitivity Level 1 Marking:2007 O DFN2030-6 Maximum Ratings 25 C Unless Otherwise Specified Symbol Parameter Rating Unit D V Drain-source Voltage 20 V DS C I Drain Current-Continuous 7 A D I Pulsed Drain Current (note1) 30 A DM V Gate-source Voltage V A GS 12 E B R Thermal Resistance Junction to Ambient /W JA 125 T Operating Junction Temperature -55 to +150 J T Storage Temperature -55 to +150 STG L Notes: 1..Repetitive Rating: Pulse width limited by junction temperature. J F G Equivalent Circuit K H Dimensions INCHES MM DIM NOTE MIN MAX MIN MAX A 0.028 .032 0.700 0.800 0.203REF. B 0.008REF. 0.000 0.050 C 0000 0.002 1.950 2.050 D 0.077 0.081 2.950 3.050 E 0.116 0.120 1.400 1.600 F 0.055 0.063 G 0.063 0.071 1.600 1.800 0.300 H 0.008 0.012 0.200 0.008 --- 0.200 --- J 0.300 0.400 K 0.018 0.026 0.500TYP. L 0.020TYP. www.mccsemi.com 1 of 4 Revision: A 2016/02/03M C C R Micro Commercial Components ELECTRICAL CHARACTERISTICS(T =25 unless otherwise specified) a Parameter Symbol Test Condition Min Typ Max Unit STATIC PARAMETERS Drain-source breakdown voltage V (BR) DSS VGS = 0V, ID =250A 20 V Zero gate voltage drain current IDSS VDS =16V,VGS = 0V 11 A VGS =4.5V, VDS = 0V 1 A Gate-body leakage current IGSS VGS =8V, VDS = 0V 10 A Gate threshold voltage (note 1) VGS(th) VDS =V , ID =250A 0.4 1 V GS VGS =10V, ID =7A 20 m VGS =4.5V, ID =6.6A 22 m Drain-source on-resistance (note 1) RDS(on) VGS =3.8V, ID =6A 24 m VGS =2.5V, ID =5.5A 26 m VGS =1.8V, ID =5A 35 m Forward tranconductance (note 1) gFS VDS =5V, ID =7A 9 S Diode forward voltage(note 1) V I =1A, VGS = 0V 1 V SD S DYNAMIC PARAMETERS (note 2) Input Capacitance C 1150 pF iss Output Capacitance C VDS =10V,VGS =0V,f =1MHz 185 pF oss Reverse Transfer Capacitance C 145 pF rss nC Total gate charge Q 15 g Gate-source charge Q VDS =10V,VGS =4.5V,ID =7A 0.8 nC gs Gate-drain charge Q 3.2 nC gd SWITCHING PARAMETERS(note 2) Turn-on delay time td(on) 6 ns Turn-on rise time tr 13 ns V =5V,V =10V, GS DD R =1.35,R =3 Turn-off delay time td(off) L GEN 52 ns Turn-off fall time tf 16 ns Notes : 1. Pulse Test : Pulse width 300s, duty cycle 0.5%. 2. Guaranteed by design, not subject to production testing. www.mccsemi.com 2 of 4 Revision: A 2016/02/03