Q12N06 MCQ12N06 Features Split Gate Trench Power MV MOSFET Technology Low Gate Charge Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free Available Upon Request By Adding Suffix-H Lead Free Finish/RoHS Compliant Suffix Designates RoHS Power MOSFET Compliant. See Ordering Information) Maximum Ratings o o Operating Junction Temperature Range : -55 C to +150 C SOP-8 o o Storage Temperature Range: -55 C to +150 C o Maximum Thermal Resistance: 40 C/W Junction to Ambient B D Parameter Symbol Rating Unit V Drain -source Voltage 60 V DS A C Gate -Source Voltage V 20 V GS F I 12 A E Drain Current-Continuous D (Note 2) Drain Current-Pulse I 48 A DM K Power Dissipation P 3.1 W D H J Internal Structure G DIMENSIONS DDDD 8 7 6 5 INCHES MM DIM NOTE MIN MAX MIN MAX A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 1 232 SS SG E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/4 MCCSEMI.COMMCQ12N06 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V Drain-Source Breakdown Voltage (BR)DSS V =0V, I =250A V GS D 60 65 (Note 1) V V =V , I =250A 1.1 1.7 2.5 V GS(th) DS GS D Gate-Threshold Voltage I V = 20V, V =0V Gate-Body Leakage Current 100 nA GSS GS DS 1 I A Zero Gate Voltage Drain Current V =60V, V =0V DSS DS GS T =55C 5 J V =10V, I =12A 8.2 9.0 GS D (Note 1) R Drain-Source On-Resistance m DS(on) V =4.5V, I =12A 10.5 13 GS D (Note 1) V =5V, I =12A g 30 S Forward Tranconductance FS DS D (Note 1) V V V =0V, I =12A 0.83 0.99 Diode Forward Voltage SD GS S I A 12 Maximum Body-Diode Continuous Current S (Note 2) Dynamic Characteristics C Input Capacitance 1988 iss V =30V,V =0V, f=1MHz Output Capacitance C pF DS GS 470 oss C Reverse Transfer Capacitance 14 rss R Gate Resistance 1.6 g V =0V,V =0V, f=1MHz DS GS (Note 2) Switching Characteristics t Turn-On Delay Time 10.5 d(on) Turn-On Rise Time t 4.5 r V =10V,V =15V, GS DS ns R =3,R =2.5 GEN L t Turn-Off Delay Time 29.5 d(off) Turn-Off Fall Time t 8.0 f Total Gate Charge(10V) 31 Q g Total Gate Charge(4.5V) 16 nC V =10V, V =30V, I =12A Gate-Source Chage Q GS DS D 6.0 gs Gage-Drain Charge Q 5.0 gd t 17 ns Body Diode Reverse Recovery Time rr I =12A,di/dt=500A/s F Q 58 nC Body Diode Reverse Recovery charge rr Rev.3-2-12012020 2/4 MCCSEMI.COM