DMN2058UW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max D Low On-Resistance BV R Max DSS DS(ON) T = +25C A Low Input Capacitance 3.5A 42m V = 10V GS Fast Switching Speed 20V 3.3A 45m V = 4.5V GS Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance Mechanical Data (R ) and yet maintain superior switching performance, making it DS(ON) Case: SOT323 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Motor Control Terminals: Finish Matte Tin Annealed over Alloy 42 Power Management Functions e3 Leadframe. Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.006 grams (Approximate) D SOT323 D G G S S Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2058UW-7 SOT323 3000/Tape & Reel DMN2058UW-13 SOT323 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2058UW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 3.5 A Continuous Drain Current (Note 6) V = 10V I A GS D State 3.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1.0 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) 20 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.5 mW D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 259 C/W JA Total Power Dissipation (Note 6) 0.7 mW PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 175 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.2 V V = V , I = 250A GS(TH) DS GS D 31.5 42 V = 10V, I = 3A GS D 32 45 V = 4.5V, I = 2A GS D Static Drain-Source On-Resistance R m DS(ON) 40.5 60 V = 2.5V, I = 2A GS D 48 91 V = 1.8V, I = 1A GS D Diode Forward Voltage 0.78 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 281 pF iss V = 10V, V = 0V DS GS Output Capacitance C 50 pF oss f = 1.0MHz Reverse Transfer Capacitance C 39 pF rss Gate Resistance R 3.1 f = 1.0MHz , V = 0V, V = 0V g GS DS Total Gate Charge (V = 4.5V) Q 3.6 nC GS g Total Gate Charge (V = 10V) Q 7.7 nC GS g V = 10V, I = 6.0A DS D Gate-Source Charge 0.5 nC Q gs Gate-Drain Charge 0.9 nC Q gd Turn-On Delay Time 2.0 ns t D(ON) Turn-On Rise Time 4.9 ns t V = 4.5V, V = 10V, Rg = 6, R GS DD Turn-Off Delay Time t 9.9 ns I = 6.0A D(OFF) D Turn-Off Fall Time t 3.3 ns F Body Diode Reverse Recovery Time t 5.4 ns I = 6.0A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge Q 0.7 nC I = 6.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2058UW February 2018 Diodes Incorporated www.diodes.com Document number: DS40456 Rev. 3- 2 NEW PRODUCT