DMN2040U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max D Low On-Resistance BV R Max DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 25m V = 4.5V 6.0A GS 20V Low Input/Output Leakage 33m V = 2.5V 5.2A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Case: SOT23 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper General Purpose Interfacing Switch e3 Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) SOT23 D D G S G S Equivalent Circuit Top View Top View Ordering Information (Note 4) Part Number Case Packaging DMN2040U-7 SOT23 3000/Tape & Reel DMN2040U-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2040U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.0 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 4.8 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1.6 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 30 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State R 159 C/W JA Total Power Dissipation (Note 6) W P 1.36 D Thermal Resistance, Junction to Ambient (Note 6) Steady State C/W R 92 JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note7) Gate Threshold Voltage V 0.5 1.2 V V = V , I = 250A GS(TH) DS GS D 21 25 V = 4.5V, I = 8.2A GS D Static Drain-Source On-Resistance R m DS(ON) 26 33 V = 2.5V, I = 3.3A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 667 pF C iss V = 10V, V = 0V, DS GS Output Capacitance C 91 pF oss f = 1.0MHz Reverse Transfer Capacitance 83 pF C rss Gate Resistance R 1.2 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 7.5 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge 0.8 nC Q gs I = 8.2A D Gate-Drain Charge Q 2.5 nC gd Turn-On Delay Time t 3.9 ns D(ON) Turn-On Rise Time 5.1 ns t R V = 10V, V = 4.5V, DD GS R = 10, R = 6 Turn-Off Delay Time t 21 ns L g D(OFF) Turn-Off Fall Time t 9.4 ns F Reverse Recovery Time 12 ns t I = 5.0A, di/dt = 100A/s RR F Reverse Recovery Charge Q 3.4 nC I = 5.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2040U March 2018 Diodes Incorporated www.diodes.com Document number: DS40476 Rev. 3 - 2 NEW PRODUCT