DMP2110U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D BV R max DSS DS(ON) T = +25C Low Input Capacitance A 80m V = -4.5V -3.5A Fast Switching Speed GS -20V 110m V = -2.5V -3.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: SOT23 ideal for high-efficiency power-management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish Matte Tin Annealed over Copper Backlighting Leadframe Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below DC-DC Converters Weight: 0.008 grams (Approximate) Motor Control SOT23 D D G S G S Top View Pin Configuration Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMP2110U-7 SOT23 3,000/Tape & Reel DMP2110U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP2110U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage -20 V V DSS Gate-Source Voltage 10 V V GSS Steady T = +25C -3.5 A Continuous Drain Current (Note 6) V = -4.5V I A GS D State -2.8 T = +70C A T = +25C Steady A -3.0 A Continuous Drain Current (Note 6) V = -2.5V I GS D State -2.4 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) -1.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) -15 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State C/W R 158 JA Total Power Dissipation (Note 6) 1.2 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 100 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage -20 V BVDSS VGS = 0V, ID = -250A -1.0 A Zero Gate Voltage Drain Current T = +25C I V = -16V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage -0.45 -1.0 V V V = V , I = -250A GS(TH) DS GS D 55 80 V = -4.5V, I = -2.8A GS D Static Drain-Source On-Resistance R m DS(ON) 67 110 V = -2.5V, I = -2.0A GS D Diode Forward Voltage V -0.7 -1.0 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 443 pF iss V = -10V, V = 0V DS GS 59 Output Capacitance C pF oss f = 1.0MHz 47 Reverse Transfer Capacitance C pF rss 8.5 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G GS DS 6.0 Total Gate Charge nC Qg Gate-Source Charge 0.6 nC Q V = -4.5V, V = -10V, I = -3A gs GS DS D Gate-Drain Charge 1.8 nC Q gd Turn-On Delay Time 4.0 ns t D(ON) Turn-On Rise Time 3.7 ns t V = -10V, V = -4.5V, R DS GS 24.5 Turn-Off Delay Time t ns R = 10, R = 1.0, I = -1A D(OFF) L G D 9.5 Turn-Off Fall Time t ns F 8.3 Reverse Recovery Time t ns I = -1.0A, di/dt = 100A/s RR F 2.0 Reverse Recovery Charge Q nC I = -1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMP2110U February 2018 Diodes Incorporated www.diodes.com Document number: DS40488 Rev. 2 - 2