DMTH10H025SK3 Green 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) T = +25C C and Robust End Application 46.3A 23m V = 10V GS Low R Minimizes Power Losses DS(ON) 100V 40.5A 30m V = 6V Low Q Minimizes Switching Losses GS G Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management Mechanical Data applications. Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH10H025SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH10H025SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 46.3 A Continuous Drain Current, V = 10V I GS D 32.7 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 180 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 45 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 180 A I SM Avalanche Current, L = 0.1mH (Note 8) 7.5 A I AS Avalanche Energy, L = 0.1mH (Note 8) 2.8 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 2.0 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 74 C/W JA Total Power Dissipation (Note 6) P 3.7 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 41 R JA C/W Thermal Resistance, Junction to Case 2.0 R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D 17.8 23 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 22.9 30 VGS = 6V, ID = 20A Diode Forward Voltage 0.9 1.3 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1544 C iss Output Capacitance 250 pF C V = 50V, V = 0V, f = 1MHz oss DS GS Reverse Transfer Capacitance 20.4 C rss Gate Resistance R 1.26 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 21.4 GS g Total Gate Charge (V = 6V) Q 13.4 GS g nC V = 50V, I = 20A DD D Gate-Source Charge Q 4.6 gs Gate-Drain Charge Q 6.0 gd Turn-On Delay Time 8.2 tD(ON) Turn-On Rise Time 11.2 t V = 50V, V = 10V, R DD GS ns Turn-Off Delay Time 27.5 I = 20A, R = 11 t D g D(OFF) Turn-Off Fall Time 13.7 t F Body Diode Reverse Recovery Time ns t 37.5 RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 50.9 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH10H025SK3 June 2018 Diodes Incorporated www.diodes.com Document number: DS40357 Rev. 3 - 2