MCQ9435 Features Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Epoxy Meets UL 94 V-0 Flammability Rating P-Channel Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix-H Power MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C SOP-8 Thermal Resistance: 89C/W Junction to Ambient B D Parameter Rating Symbol Unit Drain-Source Voltage V -30 V A DS C Gate-Source Volltage V 20 V GS F E Drain Current I -5.1 A D Pulsed Drain Current I -20 A K DM (Note 1) E 20 Single Pulse Avalanche Energy mJ AS Total Power Dissipation P 1.4 W H D J Note: 1.E condition: V =-50V,L=0.5mH, R =25, Starting T = 25C AS DD G J G DIMENSIONS Equivalent Circuit INCHES MM DIM NOTE MIN MAX MIN MAX DDDD 8 7 6 5 A 0.053 0.069 1.35 1.75 B 0.004 0.010 0.10 0.25 C 0.053 0.061 1.35 1.55 D 0.013 0.020 0.33 0.51 E 0.007 0.010 0.17 0.25 F 0.185 0.200 4.70 5.10 1 223 Marking: Q9435 SSGS G 0.050 1.270 TYP. H 0.228 0.244 5.80 6.20 J 0.150 0.157 3.80 4.00 0.016 0.050 0.40 1.27 K 0 8 0 8 Suggested Solder Pad Layout 4.61mm 6.50mm 1.50mm 1.27mm 0.80mm Rev.3-2-12012020 1/4 MCCSEMI.COMMCQ9435 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test Conditions Min Typ Max Unit Static Characteristics V V =0V, I =-250A Drain-Source Breakdown Voltage -30 V (BR)DSS GS D I V =0V, V =20V Gate-Source Leakage Current 100 nA GSS DS GS I V =-24V, V =0V Zero Gate Voltage Drain Current -1 A DSS DS GS (Note 2) V V =V , I =-250A -1.0 -1.5 -2.0 V Gate-Threshold Voltage GS(th) DS GS D V =-10V, I =-4.6A 50 60 GS D (Note 2) R V =-6V, I =-4.1A m Drain-Source On-Resistance DS(on) 60 70 GS D V =-4.5V, I =-2A 65 105 GS D (Note 2) g V =-15V, I =-4.6A 5 S Forward Tranconductance FS DS D (Note3) Dynamic Characteristics Q Total Gate Charge 40 g V =-15V,V =-10V DD GS Q Gate-Source Charge 4 nC gs I =-4.6A D Q Gate-Drain Charge 6.3 gd t Turn-On Delay Time 30 d(on) V =-15V, V =-10V DD GS t Turn-On Rise Time 60 r I =-1A ns D t Turn-Off Delay Time 120 d(off) R =6,R =15 G D t 100 Turn-Off Fall Time f R f=1MHz, V =0V, V =0V Gate Resistance 5.8 g DS GS Drain-Source Body Diode Characteristics (Note 2) V I =-2.6A, V =0V -1.2 V Body Diode Voltage SD SD GS I Continuous Drain-Source Diode Forward Current -5.1 A D I Pulsed Drain-Source Diode Forward Current -20 A SM Notes : 2. Pulse Test : Pulse Width300s, Duty Cycle2%. 3. Guaranteed by Design, Not Subject to Production Testing. Rev.3-2-12012020 2/4 MCCSEMI.COM