X-On Electronics has gained recognition as a prominent supplier of SQM100N02-3M5L_GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SQM100N02-3M5L_GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SQM100N02-3M5L_GE3 Vishay

SQM100N02-3M5L_GE3 electronic component of Vishay
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Part No.SQM100N02-3M5L_GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N Ch 20Vds 20Vgs AEC-Q101 Qualified
Datasheet: SQM100N02-3M5L_GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
800: USD 1.332 ea
Line Total: USD 1065.6 
Availability - 0
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 800
Multiples : 800
800 : USD 3.0553

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 5.138
10 : USD 4.4617
100 : USD 3.586

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 5.138
10 : USD 4.4617
100 : USD 3.586

0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 800
Multiples : 800
800 : USD 1.332
2400 : USD 1.296
4800 : USD 1.272

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the SQM100N02-3M5L_GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SQM100N02-3M5L_GE3 and other electronic components in the MOSFETs category and beyond.

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SQM100N02-3m5L www.vishay.com Vishay Siliconix Automotive N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) 20 DS Package with low thermal resistance R ( ) at V = 10 V 0.0035 DS(on) GS 100 % R and UIS tested g R ( ) at V = 4.5 V 0.0045 DS(on) GS I (A) 100 AEC-Q101 qualified D Configuration Single Material categorization: Package TO-263 for definitions of compliance please see www.vishay.com/doc 99912 TO-263 D G SS DD GG Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 20 DS V Gate-Source Voltage V 20 GS a T = 25 C 100 C Continuous Drain Current I D T = 125 C 80 C a Continuous Source Current (Diode Conduction) I 100 A S b Pulsed Drain Current I 220 DM Single Pulse Avalanche Current I 45 AS L = 0.1 mH Single Pulse Avalanche Energy E 101 mJ AS T = 25 C 150 C b Maximum Power Dissipation P W D T = 125 C 50 C Operating Junction and Storage Temperature Range T , T -55 to +175 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOLLIMITUNIT c Junction-to-Ambient PCB Mount R 40 thJA C/W Junction-to-Case (Drain) R 1 thJC Notes a. Package limited. b. Pulse test pulse width 300 s, duty cycle 2 %. c. When mounted on 1 square PCB (FR4 material). S16-1690-Rev. A, 29-Aug-16 Document Number: 76456 1 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SQM100N02-3m5L www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 20 - - DS GS D V Gate-Source Threshold Voltage V V = V , I = 250 A 1.5 2.0 2.5 GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 0 V V = 20 V - - 1 GS DS A Zero Gate Voltage Drain Current I V = 0 V V = 20 V, T = 125 C - - 50 DSS GS DS J V = 0 V V = 20 V, T = 175 C - - 250 A GS DS J a On-State Drain Current I V = 10 V V 5 V 50 - - A D(on) GS DS V = 10 V I = 30 A - 0.0020 0.0035 GS D V = 10 V I = 30 A, T = 125 C - - 0.0050 GS D J a Drain-Source On-State Resistance R DS(on) V = 10 V I = 30 A, T = 175 C - - 0.0058 GS D J V = 4.5 V I = 20 A - 0.0030 0.0045 GS D b Forward Transconductance g V = 15 V, I = 30 A - 186 - S fs DS D Dynamic b Input Capacitance C - 4300 5500 iss Output Capacitance C -V = 0 V V = 10 V, f = 1 MHz13501700 pF oss GS DS Reverse Transfer Capacitance C -585800 rss c Total Gate Charge Q -70 110 g c Gate-Source Charge Q -2V = 10 V V = 10 V, I = 50 A1- nC gs GS DS D c Gate-Drain Charge Q -11- gd Gate Resistance R f = 1 MHz 1.1 2.3 3.5 g c Turn-On Delay Time t -15 25 d(on) c Rise Time t -5 10 r V = 10 V, R = 0.2 DD L ns I 50 A, V = 10 V, R = 1 c D GEN g Turn-Off Delay Time t -3860 d(off) c Fall Time t -1525 f b Source-Drain Diode Ratings and Characteristics a Pulsed Current I -- 220 A SM Forward Voltage V I = 50 A, V = 0 V - 0.86 1.5 V SD F GS Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1690-Rev. A, 29-Aug-16 Document Number: 76456 2 For technical questions, contact: automostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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