TSM8568CS Taiwan Semiconductor N- and P-Channel 30V (D-S) Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER TYPE VALUE UNIT DS(ON) Low gate charge for fast power switching N-ch 30 V DS V 100% UIS and R tested P-ch -30 g Compliant to RoHS directive 2011/65/EU and in V = 10V 16 GS N-ch accordance to WEEE 2002/96/EC V = 4.5V 20 R GS DS(on) Halogen-free according to IEC 61249-2-21 m (max) V = -10V 24 GS P-ch V = -4.5V 37 GS N-ch 7 Q APPLICATIONS g nC P-ch 11 DC-DC Converters Power Routing Motor Drives SOP-8 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL N-ch P-ch UNIT Drain-Source Voltage V 30 -30 V DS Gate-Source Voltage V 20 25 V GS T = 25C 15 13 C (Note 1) Continuous Drain Current I A D T = 25C 8 7 A Pulsed Drain Current I 60 52 A DM (Note 2) Single Pulse Avalanche Current I 12 18 A AS (Note 2) Single Pulse Avalanche Energy E 21.6 48.6 mJ AS T = 25C 6 6 C Total Power Dissipation P W D T = 125C 1.2 1.2 C T = 25C 1.6 1.6 A Total Power Dissipation P W D T = 125C 0.3 0.3 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Thermal Resistance Junction to Case R 21 JC C/W Thermal Resistance Junction to Ambient R 78 JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: B1611 TSM8568CS Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static N-ch V = 0V, I = 250A 30 -- -- Drain-Source GS D BV V DSS P-ch Breakdown Voltage V = 0V, I = -250A -30 -- -- GS D N-ch V = V , I = 250A 1 1.4 2.5 GS DS D Gate Threshold Voltage V V GS(TH) P-ch V = V , I = -250A -1 -1.7 -2.5 GS DS D N-ch V = 20V, V = 0V -- -- 100 nA Gate-Source Leakage GS DS I GSS P-ch Current V = 25V, V = 0V -- -- 100 nA GS DS V = 0V, V = 30V -- -- 1 GS DS N-ch V = 0V, V = 30V GS DS -- -- 100 Drain-Source Leakage T = 125C J I A DSS Current V = 0V, V = -30V -- -- -1 GS DS P-ch V = 0V, V = -30V GS DS -- -- -100 T = 125C J V = 10V, I = 8A -- 10 16 GS D N-ch Drain-Source On-State V = 4.5V, I = 8A -- 13 20 GS D R m DS(on) (Note 3) Resistance V = -10V, I = -7A -- 18 24 GS D P-ch V = -4.5V, I = -7A -- 30 37 GS D N-ch Forward V = 5V, I = 8A -- 26 -- DS D g S fs (Note 3) P-ch Transconductance V = -5V, I = -7A -- 16 -- DS D (Note 4) Dynamic N-ch -- 14 -- Total Gate Charge Q g(VGS=10V) P-ch -- -- 21.5 N-ch -- 7 -- N-ch Total Gate Charge Q g(VGS=4.5V) P-ch -- -- 11 V = 15V, I = 8A DS D nC N-ch -- -- P-ch 1.7 Gate-Source Charge Q gs P-ch -- -- V = -15V, I = -7A DS D 3.4 N-ch -- -- 3.7 Gate-Drain Charge Q gd P-ch -- -- 5.3 N-ch -- -- 646 N-ch Input Capacitance C iss P-ch -- 1089 -- V = 0V, V = 15V GS DS N-ch -- -- f = 1.0MHz 108 Output Capacitance C pF oss P-ch -- -- P-ch 190 V = 0V, V = -15V N-ch -- -- Reverse Transfer 70 GS DS C rss f = 1.0MHz P-ch -- -- Capacitance 119 N-ch 0.9 6 3 Gate Resistance f = 1.0MHz R g P-ch 3.6 12 24 2 Version: B1611