TSM6502CR Taiwan Semiconductor N- and P-Channel 60V (D-S) Power MOSFET FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER TYPE VALUE UNIT DS(ON) Low gate charge for fast power switching N-ch 60 V DS V 100% UIS and R tested P-ch -60 g Compliant to RoHS directive 2011/65/EU and in V = 10V 34 GS N-ch accordance to WEEE 2002/96/EC V = 4.5V 40 R GS DS(on) Halogen-free according to IEC 61249-2-21 m (max) V = -10V 68 GS P-ch V = -4.5V 110 GS N-ch 10.3 Q APPLICATIONS g nC P-ch 9.5 DC-DC Converters Power Routing Motor Drives PDFN56 Dual Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL N-ch P-ch UNIT Drain-Source Voltage V 60 -60 V DS Gate-Source Voltage V 20 20 V GS T = 25C 24 -18 C (Note 1) Continuous Drain Current I A D T = 25C 5.4 -4 A Pulsed Drain Current I 96 -72 A DM (Note 2) Single Pulse Avalanche Current I 12.7 -12.7 A AS (Note 2) Single Pulse Avalanche Energy E 24 24 mJ AS T = 25C 40 40 C Total Power Dissipation P W D T = 125C 8.1 8.1 C T = 25C 2 2 A Total Power Dissipation P W D T = 125C 0.4 0.4 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Thermal Resistance Junction to Case R 3.1 JC C/W Thermal Resistance Junction to Ambient R 61 JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. RJA is guaranteed by design while RCA is determined by the users board design. 1 Version: A1701 TSM6502CR Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYPE MIN TYP MAX UNIT Static N-ch V = 0V, I = 250A 60 -- -- Drain-Source GS D BV V DSS P-ch Breakdown Voltage V = 0V, I = -250A -60 -- -- GS D N-ch V = V , I = 250A 1.2 1.7 2.5 GS DS D Gate Threshold Voltage V V GS(TH) P-ch V = V , I = -250A -1.2 -1.5 -2.5 GS DS D N-ch V = 20V, V = 0V -- -- 100 nA Gate-Source Leakage GS DS I GSS P-ch Current V = 20V, V = 0V -- -- 100 nA GS DS V = 0V, V = 60V -- -- 1 GS DS N-ch V = 0V, V = 60V GS DS -- -- 100 Drain-Source Leakage T = 125C J I A DSS Current V = 0V, V = -60V -- -- -1 GS DS P-ch V = 0V, V = -60V GS DS -- -- -100 T = 125C J V = 10V, I = 5.4A -- 28 34 GS D N-ch Drain-Source On-State V = 4.5V, I = 4.9A -- 33 40 GS D R m DS(on) (Note 3) Resistance V = -10V, I = -4A -- 57 68 GS D P-ch V = -4.5V, I = -3.2A -- 73 110 GS D N-ch Forward V = 5V, I = 5.4A -- 19 -- DS D g S fs (Note 3) P-ch Transconductance V = -5V, I = -4A -- 11 -- DS D (Note 4) Dynamic N-ch N-ch Q -- 20.8 -- g(VGS=10V) V = 30V, I = 5.4A DS D Total Gate Charge P-ch P-ch -- -- Q 18.1 g(VGS=-10V) V = -30V, I = -4A DS D N-ch Q -- 10.3 -- g(VGS=4.5V) Total Gate Charge nC P-ch -- -- Q 9.5 N-ch - g(VGS= 4.5V) N-ch -- -- 3.9 V = 30V, I = 4.9A DS D Gate-Source Charge Q gs P-ch -- -- P-ch 2.6 N-ch -- -- V = -30V, I = -3.2A DS D 4.2 Gate-Drain Charge Q gd P-ch -- -- 4.8 N-ch -- -- 1159 N-ch Input Capacitance C iss P-ch -- -- 930 V = 0V, V = 30V GS DS N-ch -- 59 -- f = 1.0MHz Output Capacitance C pF oss P-ch -- -- P-ch 65 N-ch -- -- V = 0V, V = -30V Reverse Transfer GS DS 15 C rss f = 1.0MHz P-ch -- -- Capacitance 26 N-ch 0.6 4 2 Gate Resistance f = 1.0MHz R g P-ch 4.5 30 15 2 Version: A1701