TSM4936D 30V N-Channel MOSFET PRODUCT SUMMARY SOP-8 Pin Definition: 1. Source 1 8. Drain 1 V (V) R (m) I (A) DS DS(on) D 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 36 V = 10V 5.9 GS 30 4. Gate 2 5. Drain 2 53 V = 4.5V 4.9 GS Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application High-Side DC/DC Conversion Notebook Sever Ordering Information Part No. Package Packing Dual N-Channel MOSFET TSM4936DCS RLG SOP-8 2.5Kpcs / 13 Reel Note: G denote for Halogen Free Product o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V 30 V DS Gate-Source Voltage V 20 V GS Continuous Drain Current I 5.9 A D Pulsed Drain Current I 40 A DM a,b Continuous Source Current (Diode Conduction) I 1.0 A S o Ta = 25 C 3.0 Maximum Power Dissipation P W D o Ta = 75 C 2.1 o Operating Junction Temperature T +150 C J o Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit o Junction to Case Thermal Resistance R 32 C/W JC o Junction to Ambient Thermal Resistance (PCB mounted) R 50 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t 10 sec. Document Number: DS P0000103 1 Version: B15 TSM4936D 30V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 1 1.4 3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 24V, V = 0V I -- -- 1.0 A DS GS DSS a On-State Drain Current V 5V, V = 10V I 30 -- -- A DS GS D(ON) V = 10V, I = 5.9A -- 32 36 GS D a Drain-Source On-State Resistance R m DS(ON) V = 4.5V, I = 4.9A -- 42 53 GS D a Forward Transconductance V = 15V, I = 5.9A g -- 15 -- S DS D fs Diode Forward Voltage I = 1A, V = 0V V -- 0.76 1.0 V S GS SD b Dynamic Total Gate Charge Q -- 13 -- g V = 15V, I = 5.9A, DS D Gate-Source Charge Q -- 4.2 -- nC gs V = 10V GS Gate-Drain Charge Q -- 3.1 -- gd Input Capacitance C -- 610 -- iss V = 15V, V = 0V, DS GS Output Capacitance C -- 100 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 77 -- rss c Switching Turn-On Delay Time t -- 9.1 -- d(on) V = 15V, R = 15, DD L Turn-On Rise Time t -- 16.5 -- r I = 1A, V = 10V, nS D GEN Turn-Off Delay Time t -- 23 -- d(off) R = 6 G Turn-Off Fall Time t -- 3.5 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. Document Number: DS P0000103 2 Version: B15