TSM260P02 Taiwan Semiconductor P-Channel Power MOSFET -20V, -6.5A, 26m FEATURES KEY PERFORMANCE PARAMETERS Fast switching PARAMETER VALUE UNIT Suitable for -1.8V Gate Drive Applications V -20 V DS Pb-free plating I -6.5 A D RoHS compliant V = -4.5V 26 GS Halogen-free mold compound R (max) V = -2.5V 32 m DS(on) GS V = -1.8V 40 GS Q g 19.5 nC APPLICATION Battery Pack Portable Devices SOT-26 SOT-23 Note: 1. MSL 1 (Moisture Sensitivity Level) for SOT-26 per J-STD-020 2. MSL 3 (Moisture Sensitivity Level) for SOT-23 per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) C PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -20 V DS Gate-Source Voltage V 10 V GS T = 25C -6.5 C Continuous Drain Current I A D T = 100C -4.1 C (Note 1) Pulsed Drain Current I -26 A DM Total Power Dissipation T = 25C P 1.56 W C DTOT Operating Junction Temperature T 150 C J Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Ambient Thermal Resistance R 80 C/W JA Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. R is guaranteed by design while JA JC R is determined by the users board design. R is shown for single device operation on FR-4 PCB in still air. CA JA Document Number: DS P0000208 1 Version: D1811 TSM260P02 Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT (Note 2) Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -0.3 -0.6 -1.0 V Gate Body Leakage V = 10V, V = 0V I -- -- 100 nA GS DS GSS V = -20V, V = 0V -- -- -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -16V, T = 125C -- -- -10 DS J V = -4.5V, I = -5A -- 21 26 GS D Drain-Source On-State Resistance V = -2.5V, I = -4A R -- 26 32 m GS D DS(on) V = -1.8V, I = -3A GS D -- 32 40 V = -10V, I = -5A g -- 15 -- S Forward Transconductance DS S fs (Note 3) Dynamic Total Gate Charge Q -- 19.5 -- g V = -10V, I = -5A, DS D Gate-Source Charge Q -- 2 -- nC gs V =- 4.5V GS Gate-Drain Charge Q -- 3.6 -- gd Input Capacitance C -- 1670 -- iss V = -15V, V = 0V, DS GS Output Capacitance C -- 220 -- oss pF F = 1.0MHz Reverse Transfer Capacitance C -- 120 -- rss Switching Turn-On Delay Time t -- 10.4 -- d(on) V = -10V, I = -1A, DD D Turn-On Rise Time t -- 37.5 -- r V = -4.5V, ns GS Turn-Off Delay Time t -- 89.1 -- d(off) R =25 GEN Turn-Off Fall Time t -- 24.6 -- f Source-Drain Diode Forward Voltage V = 0V, I = -1A -- -- -1 V GS S V SD Continuous Forward Current I -- -- -6.5 A Integral reverse diode S in the MOSFET Pulse Forward Current I -- -- -26 A SM Notes: 1. Pulse width limited by safe operating area 2. Pulse test: PW 300s, duty cycle 2% 3. Switching time is essentially independent of operating temperature. Document Number: DS P0000208 2 Version: D1811