TSM2303 30V P-Channel MOSFET SOT-23 PRODUCT SUMMARY Pin Definition: 1. Gate V (V) R (m) I (A) DS DS(on) D 2. Source 3. Drain 180 V =-10V -1.3 GS -30 300 V =-4.5V -1.1 GS Block Diagram Features Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Portable Devices High Speed Switch Ordering Information Part No. Package Packing TSM2303CX RFG SOT-23 3Kpcs / 7 Reel Note: G denotes Halogen Free Product. P-Channel MOSFET Absolute Maximum Rating (T =25C unless otherwise noted) A Parameter Symbol Limit Unit -30 Drain-Source Voltage V V DS 20 Gate-Source Voltage V V GS -1.3 Continuous Drain Current I A D -10 Pulsed Drain Current I A DM a,b Continuous Source Current (Diode Conduction) I -1.3 A S T =25C 0.7 A Maximum Power Dissipation P W D T =75C 0.45 A Operating Junction Temperature T +150 C J Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Junction to Case Thermal Resistance R 80 C/W JC Junction to Ambient Thermal Resistance (PCB mounted) R 140 C/W JA Notes: a. Pulse width limited by the Maximum junction temperature 2 5 sec. b. Surface Mounted on a 1 in pad of 2oz Cu, t Document Number: DS P0000045 1 Version: B15 Not Recommended TSM2303 30V P-Channel MOSFET Electrical Specifications (Ta = 25C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV -30 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V -1 -- -3 V DS GS D GS(TH) Gate Body Leakage V = 20V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = -30V, V = 0V I -- -- 1.0 A DS GS DSS V = -10V, I = -1.3A -- 150 180 GS D Drain-Source On-State Resistance R m DS(ON) V = -4.5V, I = -1.1A -- 250 300 GS D a Forward Transconductance V = -15V, I = -1.3A g -- 5 -- S DS D fs Diode Forward Voltage I = -1.3A, V = 0V V -- -- -1.2 V S GS SD b Dynamic Total Gate Charge Q -- 10 15 g V = -10V, I = -1.3A, DS D nC Gate-Source Charge Q -- 1.9 -- gs V = -4.5V GS Gate-Drain Charge Q -- 2 -- gd Input Capacitance C -- 565 -- iss V = -10V, V = 0V, DS GS Output Capacitance C -- 126 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 75 -- rss b.c Switching Turn-On Delay Time t -- 10 -- d(on) V = -10V, R = 15, DD L Turn-On Rise Time t -- 9 -- r I = -1A, V = -4.5V, nS D GEN Turn-Off Delay Time t -- 27 -- d(off) R = 6 G Turn-Off Fall Time t -- 7 -- f Notes: a. pulse test: PW 300S, duty cycle 2% b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Document Number: DS P0000045 2 Version: B15 Not Recommended