TSM180P03CS 30V P-Channel Power MOSFET SOP-8 Key Parameter Performance Pin Definition: 1. Source 8. Drain Parameter Value Unit 2. Source 7. Drain 3. Source 6. Drain V -30 V DS 4. Gate 5. Drain V = -10V 18 GS R (max) m DS(on) V = -4.5V 30 GS Q 14.6 nC g Block Diagram Ordering Information Part No. Package Packing TSM180P03CS RLG SOP-8 2.5kpcs / 13 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds P-Channel MOSFET o Absolute Maximum Ratings (Tc=25 C unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V -30 V DS Gate-Source Voltage V 20 V GS Tc=25C -10 A Continuous Drain Current I D Tc=100C -6.3 A (Note 1) Pulsed Drain Current I -40 A DM o Power Dissipation T = 25 C P 2.5 W C D Operating Junction Temperature T 150 C J o Storage Temperature Range T -55 to +150 C STG Thermal Performance Parameter Symbol Limit Unit o Thermal Resistance - Junction to Ambient R 50 C/W JA 1/5 Version: A14 TSM180P03CS 30V P-Channel Power MOSFET o Electrical Specifications (T =25 C unless otherwise noted) J Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = -250A BV -30 -- -- V GS D DSS V = -10V, I = -8A -- 14 18 GS D Drain-Source On-State Resistance R m DS(ON) V = -4.5V, I = -6A GS D -- 23 30 Gate Threshold Voltage V = V , I = -250A V DS GS D GS(TH) -1.2 -1.6 -2.5 V V = -30V, V = 0V -- -- -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -24V, T = 125C -- -- -10 DS J Gate Body Leakage V = 20V, V = 0V I GS DS GSS -- -- 100 nA (Note 2) Forward Transconductance V = -10V, I = -8A g DS D fs -- 10.5 -- S Dynamic (Note 2,3) Total Gate Charge Q -- 14.6 -- g V = -15V, I = -8A, (Note 2,3) DS D Gate-Source Charge Q -- 4.1 -- nC gs V = -4.5V GS (Note 2,3) Gate-Drain Charge Q gd -- 6.3 -- Input Capacitance C iss -- 1730 -- V = -15V, V = 0V, DS GS Output Capacitance C -- 180 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C rss -- 125 -- Switching (Note 2,3) Turn-On Delay Time t -- 9 -- d(on) (Note 2,3) Turn-On Rise Time t -- 21.8 -- r V = -15V, I = -1A, DD D ns (Note 2,3) Turn-Off Delay Time V = -10V, R =6 t GS GEN d(off) -- 59.8 -- (Note 2,3) Turn-Off Fall Time t f -- 14.4 -- Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- -10 A S Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET I -- -- -40 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = -1A V GS S SD -- -- -1 V Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width 300s, duty cycle 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: A14