TSM1N45CW Taiwan Semiconductor

TSM1N45 Taiwan Semiconductor N-Channel Power MOSFET 450V, 0.5A, 4.25 FEATURES KEY PERFORMANCE PARAMETERS Low gate charge typical 6.5nC PARAMETER VALUE UNIT Low Crss typical 6.5pF V 450 V DS Avalanche energy specified R (max) 4.25 DS(on) Improved dV/dt capability Q 6.5 nC g Pb-free plating Compliant to RoHS Directive 2011/65/EU and in accordance to WEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition APPLICATION Power Supply Lighting SOT-223 TO-92 Notes: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL Limit UNIT Drain-Source Voltage V 450 V DS Gate-Source Voltage V 30 V GS (Note 1) Continuous Drain Current T = 25C I 0.5 A C D (Note 2) Pulsed Drain Current I 4 A DM TO-92 2 Total Power Dissipation T = 25C P W C DTOT SOT-223 15 (Note 3) Single Pulsed Avalanche Energy E 108 mJ AS (Note 3) Single Pulsed Avalanche Current I 1.6 A AS (Note 3) Repetitive Avalanche Energy E 0.25 mJ AR (Note 3) Repetitive Avalanche Current I 0.5 A AR Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Document Number: DS P0000035 1 Version: E15 Not Recommended TSM1N45 Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL Limit UNIT Junction to Lead Thermal Resistance TO-92 R 50 JL Junction to Case Thermal Resistance SOT-223 R 8.5 JC C/W TO-92 140 Junction to Ambient Thermal Resistance R JA SOT-223 60 Notes: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined JA at the solder mounting surface of the drain pins. R is guaranteed by design while R is determined by the users board JA CA design. R shown below for single device operation on FR-4 PCB with minimum recommended footprint in still air. JA Document Number: DS P0000035 2 Version: E15 Not Recommended