TSM210N02CX 20V N-Channel Power MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain V 20 V DS V = 4.5V 21 GS Note: V = 2.5V MSL 1 (Moisture Sensitivity Level) R (max) GS 25 m DS(on) per J-STD-020 V = 1.8V GS 32 Q 5.8 nC g Block Diagram Ordering Information Ordering code Package Packing TSM210N02CX RFG SOT-23 3kpcs / 7 Reel Note: Halogen-free according to IEC 61249-2-21 definition N-Channel MOSFET Absolute Maximum Ratings (T = 25C unless otherwise noted) C Limit Parameter Symbol Unit 20 Drain-Source Voltage V V DS 10 Gate-Source Voltage V V GS 6.7 T = 25C A C Continuous Drain Current I D 4.2 T = 100C A C (Note 1) 26.8 Pulsed Drain Current I A DM Power Dissipation T = 25C P 1.56 W C D Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Ambient R 80 C/W JA 1/5 Version: B1811 TSM210N02CX 20V N-Channel Power MOSFET Electrical Specifications (T = 25C unless otherwise noted) C Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 20 -- -- V GS D DSS V = 4.5V, I = 4A GS D -- 19 21 Drain-Source On-State Resistance V = 2.5V, I = 3A R -- 22 25 m GS D DS(ON) V = 1.8V, I = 2A -- 26 32 GS D Gate Threshold Voltage V = V , I = 250A V 0.3 0.6 0.8 V DS GS D GS(TH) V = 20V, V = 0V -- -- 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16V, T = 125C -- -- 10 DS J Gate Body Leakage V = 10V, V = 0V I -- -- 100 nA GS DS GSS (Note 2) Forward Transconductance V = 10V, I = 4A g -- 9.5 -- S DS S fs Dynamic (Note 2,3) Total Gate Charge Q -- 5.8 -- g V = 10V, I = 4A, (Note 2,3) DS D Gate-Source Charge Q -- 0.6 -- nC gs V = 4.5V GS (Note 2,3) Gate-Drain Charge Q -- 2 -- gd Input Capacitance C iss -- 600 -- V = 10V, V = 0V, DS GS Output Capacitance C oss -- 70 -- pF f = 1.0MHz Reverse Transfer Capacitance C -- 45 -- rss Switching (Note 2,3) Turn-On Delay Time t d(on) -- 5.0 -- (Note 2,3) Turn-On Rise Time t r -- 14.4 -- V = 10V, I = 1A, DD D ns (Note 2,3) Turn-Off Delay Time V = 4.5V, R =25 t GS GEN -- 30.0 -- d(off) (Note 2,3) Turn-Off Fall Time t -- 9.2 -- f Source-Drain Diode Ratings and Characteristic Maximum Continuous Drain-Source I -- -- 6.7 A S Diode Forward Current Integral reverse diode in Maximum Pulse Drain-Source Diode the MOSFET I -- -- 26.8 A SM Forward Current Diode-Source Forward Voltage V = 0V, I = 1A V -- -- 1 V GS S SD Note: 1. Pulse width limited by safe operating area 2. Pulse test: pulse width 300s, duty cycle 2% 3. Switching time is essentially independent of operating temperature. 2/5 Version: B1811