StrongIRFET IRFR7746PbF IRFU7746PbF HEXFET Power MOSFET Application Brushed Motor drive applications V 75V DSS D BLDC Motor drive applications R typ. 9.5m DS(on) Battery powered circuits max Half-bridge and full-bridge topologies 11.2m G Synchronous rectifier applications I 59A D (Silicon Limited) S Resonant mode power supplies I 56A D (Package Limited) OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters D S Benefits S D G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G Fully Characterized Capacitance and Avalanche SOA I-Pak Enhanced body diode dV/dt and dI/dt Capability D-Pak IRFU7746PbF Lead-Free, RoHS Compliant IRFR7746PbF G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 IRFR7746PbF IRFR7746PbF D-Pak Tape and Reel 2000 IRFR7746TRPbF IRFU7746PbF I-Pak Tube 75 IRFU7746PbF 30 60 I = 35A Limited by package D 50 25 40 20 T = 125C J 30 15 20 T = 25C J 10 10 5 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 V Gate -to -Source Voltage (V) T , Case Temperature (C) GS, C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 7, 2014 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRFR/U7746PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 59 D C GS T = 100C Continuous Drain Current, V 10V (Silicon Limited) 42 I D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 56 D C GS I Pulsed Drain Current 230* DM P T = 25C Maximum Power Dissipation 99 W D C Linear Derating Factor 0.66 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range STG C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 116 AS (Thermally limited) mJ E Single Pulse Avalanche Energy 160 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.52 JC R Junction-to-Ambient (PCB Mount) 50 C/W JA R Junction-to-Ambient 110 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 53 mV/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 9.5 11.2 V = 10V, I = 35A DS(on) GS D m 11.2 V = 6.0V, I = 18A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V =75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =75V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.6 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by source bonding technology. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 190H, R = 50, I = 35A, V =10V. Jmax J G AS GS I 35A, di/dt 570A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994.please refer to application note to AN-994: