DMP6110SVTQ P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Low Input Capacitance C Fast Switching Speed 105m V = -10V -7.3A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -60V Halogen and Antimony Free. Green Device (Note 3) 130m V = -4.5V -6.5A GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Case: TSOT26 automotive applications. It is qualified to AEC-Q101, supported by a Case Material: Molded Plastic,Gree Molding Compound. PPAP and is ideal for use in: UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) TSOT26 D D 1 6 D D 2 5 D G 3 4 G S S Top View Device Schematic Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMP6110SVTQ-7 TSOT26 3,000/Tape & Reel DMP6110SVTQ-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMP6110SVTQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage 20 V V GSS T = +25C -7.3 C A Continuous Drain Current (Note 7) V = -10V I GS D -5.8 T = +70C C Maximum Body Diode Forward Current (Note 7) I -1.8 A S Pulsed Drain Current (380s Pulse, 1% Duty Cycle) I -24 A DM Pulsed Source Current (380s Pulse, 1% Duty Cycle) I -24 A SM Avalanche Current (Note 7) L = 0.1mH I -19 A AS Repetitive Avalanche Energy (Note 7) L = 0.1mH 18 mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit T = +25C 1.2 A Total Power Dissipation (Note 6) W P D T = +70C 0.75 A Steady State 105 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 60 C/W T = +25C 1.8 A Total Power Dissipation (Note 7) W P D T = +70C 1.1 A Steady State 69 C/W Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 39 C/W Thermal Resistance, Junction to Case (Note 7) R 15 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D Zero Gate Voltage Drain Current -1 A I V = -48V, V = 0V DSS DS GS Gate-Source Leakage -100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage -1 -3 V V V = V , I = -250A GS(TH) DS GS D 105 V = -10V, I = -4.5A GS D Static Drain-Source On-Resistance m R DS(ON) 130 V = -4.5V, I = -3.5A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 969 ISS 57 Output Capacitance C pF V = -30V, V = 0V, f = 1.0MHz OSS DS GS 44 Reverse Transfer Capacitance C RSS Gate Resistance 13.7 R V = 0V, V = 0V, f = 1.0MHz G DS GS 8.2 Total Gate Charge (V = -4.5V) Q GS G 17.2 Total Gate Charge (V = -10V) Q GS G nC V = -30V, I = -12A DS D Gate-Source Charge 3.0 Q GS 3.1 Gate-Drain Charge Q GD 4.4 Turn-On Delay Time t D(ON) 23 Turn-On Rise Time t R V = -10V, V = -30V, R = 3, GS DS GEN ns 34 Turn-Off Delay Time t I = -12A D(OFF) D 42 Turn-Off Fall Time t F Body Diode Reverse Recovery Time 13.2 ns t RR I = -12A, dI/dt = 100A/s S Body Diode Reverse Recovery Charge 6.18 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMP6110SVTQ September 2018 Diodes Incorporated www.diodes.com Document number: DS39190 Rev. 2 - 2 NEW PRODUCT