TSM2302CX Taiwan Semiconductor N-Channel Power MOSFET 20V, 3.9A, 65m FEATURES KEY PERFORMANCE PARAMETERS Low R to minimize conductive losses PARAMETER VALUE UNIT DS(ON) Low gate charge for fast power switching V 20 V DS Compliant to RoHS directive 2011/65/EU and in V = 4.5V 65 GS accordance to WEEE 2002/96/EC R (max) m DS(on) Halogen-free according to IEC 61249-2-21 V = 2.5V 95 GS Q 7.8 nC g APPLICATIONS Load switch Backlights SOT-23 Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8 V GS T = 25C 3.9 C (Note 1) Continuous Drain Current I A D T = 25C 3.2 A Pulsed Drain Current I 15.6 A DM T = 25C 1.5 C Total Power Dissipation P W D T = 125C 0.3 C T = 25C 1 A Total Power Dissipation P W D T = 125C 0.2 A Operating Junction and Storage Temperature Range T , T - 55 to +150 C J STG THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance R 84 C/W JC Junction to Ambient Thermal Resistance R 124 C/W JA Thermal Performance Note: R is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- JA thermal reference is defined at the solder mounting surface of the drain pins. R is guaranteed by design while R is JA CA determined by the users board design. 1 Version: E1608 TSM2302CX Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Static Drain-Source Breakdown Voltage V = 0V, I = 250A BV 20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250A V 0.65 0.9 1.2 GS DS D GS(TH) V Gate-Source Leakage Current V = 8V, V = 0V I -- -- 100 nA GS DS GSS V = 0V, V = 20V GS DS -- -- 1 Drain-Source Leakage Current I A V = 0V, V = 20V DSS GS DS -- -- 100 T = 125C J V = 4.5V, I = 3.2A -- 34 65 Drain-Source On-State Resistance GS D R m DS(on) (Note 2) V = 2.5V, I = 3.2A -- 45 95 GS D (Note 2) V = 5V, I = 3.2A Forward Transconductance g -- 19 -- S DS D fs (Note 3) Dynamic V = 4.5V, V = 10V, GS DS Total Gate Charge Q -- 7.8 -- g I = 3.2A D Total Gate Charge Q -- 5 -- g nC V = 2.5V, V = 10V, GS DS Gate-Source Charge Q -- 1 -- gs I = 3.2A D Gate-Drain Charge Q -- 2.5 -- gd Input Capacitance C -- 587 -- iss V = 0V, V = 10V GS DS Output Capacitance C -- 94 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 64 -- rss Gate Resistance f = 1.0MHz, open drain R -- 1.6 -- g (Note 3) Switching Turn-On Delay Time t -- 5.4 -- d(on) Turn-On Rise Time t -- 26.4 -- r V = 4.5V, V = 10V, GS DS ns Turn-Off Delay Time I = 3.2A, R = 2, t -- 16.4 -- D G d(off) Turn-Off Fall Time t -- 15.8 -- f Source-Drain Diode (Note 2) Forward Voltage V -- -- 1.2 V V = 0V, I = 3.2A SD GS S Reverse Recovery Time t -- 19 -- ns rr I = 3.2A , S Reverse Recovery Charge Q -- 8 -- nC dI/dt = 100A/s rr Notes: 1. Silicon limited current only. 2. Pulse test: Pulse Width 300s, duty cycle 2%. 3. Switching time is essentially independent of operating temperature. ORDERING INFORMATION PART NO. PACKAGE PACKING TSM2302CX RFG SOT-23 3,000pcs / 7 Reel 2 Version: E1608