TSM2312 20V N-Channel MOSFET SOT-23 Key Parameter Performance Pin Definition: 1. Gate Parameter Value Unit 2. Source 3. Drain V 20 V DS V = 4.5V 33 GS R (max) V = 2.5V 40 m DS(on) GS V = 1.8V 51 GS Q 11 nC g Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Information Part No. Package Packing TSM2312CX RFG SOT-23 3,000pcs / 7 Reel Note: G denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total N-Channel MOSFET Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (T = 25C, unless otherwise noted) C Parameter Symbol Limit Unit Drain-Source Voltage V 20 V DS Gate-Source Voltage V 8 V GS Continuous Drain Current I 4.9 A D (Note 1) Pulsed Drain Current I 15 A DM (Note 2) Continuous Source Current (Diode Conduction) I 1.0 A S Ta = 25C 0.75 Maximum Power Dissipation P W D Ta = 75C 0.48 Operating Junction and Storage Temperature Range T , T -55 to +150 C J STG Thermal Performance Parameter Symbol Limit Unit Thermal Resistance Junction to Lead R 75 C/W JL Thermal Resistance Junction to Ambient R 140 C/W JA Document Number: DS P0000054 1 Version: E15 TSM2312 20V N-Channel MOSFET Electrical Specifications Parameter Conditions Symbol Min Typ Max Unit (Note 3) Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 20 -- -- V GS D DSS Gate Threshold Voltage V = V , I = 250uA V 0.45 0.65 1.0 V DS GS D GS(TH) Gate Body Leakage V = 8V, V = 0V I -- -- 100 nA GS DS GSS Zero Gate Voltage Drain Current V = 16V, V = 0V I -- -- 1.0 A DS GS DSS On-State Drain Current V =10V, V = 4.5V I 15 -- -- A DS GS D(ON) V = 4.5V, I = 4.9A -- 27 33 GS D Drain-Source On-State Resistance V = 2.5V, I = 4.4A R -- 33 40 m GS D DS(ON) V = 1.8V, I = 3.9A -- 42 51 GS D Forward Transconductance V = 15V, I = 5.0A g -- 40 -- S DS D fs Diode Forward Voltage I = 1.0A, V = 0V V -- 0.8 1.2 V S GS SD (Note 4) Dynamic Total Gate Charge Q -- 11 14 g V = 10V, I = 5.0A, DS D nC Gate-Source Charge Q -- 1.5 -- gs V = 4.5V GS Gate-Drain Charge Q -- 2.1 -- gd Input Capacitance C -- 500 -- iss V = 10V, V = 0V, DS GS Output Capacitance C -- 300 -- pF oss f = 1.0MHz Reverse Transfer Capacitance C -- 140 -- rss (Note 5) Switching Turn-On Delay Time t -- 15 25 d(on) V = 10V, R = 10, DD L Turn-On Rise Time t -- 40 60 r I = 1A, V = 4.5V, ns D GEN Turn-Off Delay Time t -- 48 70 d(off) R = 6 G Turn-Off Fall Time t -- 31 45 f Notes: 1. Pulse width limited by the maximum junction temperature 2. Surface Mounted on FR4 Board t 5 sec. 3. Pulse test: PW 300s, duty cycle 2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Document Number: DS P0000054 2 Version: E15