TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate V (V) R () I (A) 2. Drain DS DS(on) D 3. Source 600 4.4 V =10V 1 GS General Description The TSM2NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Block Diagram Features Low R 3.9 (Typ.) DS(ON) Low gate charge typical 9.5nC (Typ.) Low Crss typical 5pF (Typ.) 100% Avalanche Tested Ordering Information Part No. Package Packing TSM2NB60CH C5G TO-251 75pcs / Tube TSM2NB60CP ROG TO-252 2.5Kpcs / 13 Reel TSM2NB60CZ C0 TO-220 50pcs / Tube N-Channel MOSFET TSM2NB60CI C0 ITO-220 50pcs / Tube Note: G denotes for Halogen Free o Absolute Maximum Rating (Ta = 25 C unless otherwise noted) Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 Drain-Source Voltage V 600 V DS Gate-Source Voltage V 30 V GS Tc = 25C 2 A Continuous Drain Current I D Tc = 100C 1.35 A Pulsed Drain Current * I 8 A DM Single Pulse Avalanche Energy (Note 2) E 55 mJ AS Avalanche Current (Repetitive) (Note 1) I 2 A AR Repetitive Avalanche Energy (Note 1) E 4.4 mJ AR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns o Total Power Dissipation T = 25 C P 44 25 70 W C TOT Operating Junction Temperature T 150 C J o Storage Temperature Range T -55 to +150 C STG Note: Limited by maximum junction temperature 1/10 Version: C12 TSM2NB60 600V N-Channel Power MOSFET Thermal Performance Limit Parameter Symbol Unit IPAK/DPAK ITO-220 TO-220 o Thermal Resistance - Junction to Case R 2.87 5 1.78 C/W JC o Thermal Resistance - Junction to Ambient R 110 62.5 62.5 C/W JA o Electrical Specifications (Ta = 25 C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage V = 0V, I = 250uA BV 600 -- -- V GS D DSS Drain-Source On-State Resistance V = 10V, I = 1A R -- 3.9 4.4 GS D DS(ON) Gate Threshold Voltage V = V , I = 250uA V 2.5 3.6 4.5 V DS GS D GS(TH) Zero Gate Voltage Drain Current V = 600V, V = 0V I -- -- 10 uA DS GS DSS Gate Body Leakage V = 30V, V = 0V I -- -- 100 nA GS DS GSS Forward Transfer Conductance V = 40V, I = 1A g -- 1.5 -- S DS D fs Dynamic Total Gate Charge V = 480V, I = 2A, Q -- 9.4 -- g DS D Gate-Source Charge V = 10V Q -- 2.2 -- nC GS gs (Note 4,5) Gate-Drain Charge Q -- 4.7 -- gd Input Capacitance C -- 249 -- iss V = 25V, V = 0V, DS GS pF Output Capacitance C -- 30.7 -- oss f = 1.0MHz Reverse Transfer Capacitance C -- 5 -- rss Switching Turn-On Delay Time t -- 9.1 -- d(on) V = 10V, I = 2A, GS D Turn-On Rise Time t -- 9.8 -- r V = 300V, R =25 nS DD G Turn-Off Delay Time t -- 17.4 -- d(off) (Note 4,5) Turn-Off Fall Time t -- 12.4 -- f Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in I -- -- 2 A S Source Current (Pulse) the MOSFET I -- -- 8 A SM Diode Forward Voltage I = 2A, V = 0V V -- 0.9 1.4 V S GS SD Reverse Recovery Time V = 0V, I =2A, t -- 490 -- nS fr GS S dI /dt = 100A/us Reverse Recovery Charge Q -- 0.8 -- uC F fr Note 1: Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature Note 2: V = 50V, I =2A, L=25mH, R =25, Starting T =25C DD AS G J Note 3: I 2A, di/dt200A/uS, V BV , Starting T =25C SD DD DSS J Note 4: Pulse test: pulse width 300uS, duty cycle 2% Note 5: Essentially Independent of Operating Temperature 2/10 Version: C12