DMT6002LPS
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8 (Type K)
Product Summary Features
I Max 100% Unclamped Inductive Switching Ensures More Reliable
D
BV R Max
DSS DS(ON) T = +25C and Robust End Application
C
(Note 9)
Thermally Efficient Package Cooler Running Applications
2m @ V = 10V 100A
GS High Conversion Efficiency
60V
3m @ V = 6V 100A Low R Minimizes On-State Losses
GS DS(ON)
<1.1mm Package Profile Ideal for Thin Applications
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Mechanical Data
Description and Applications
Case: PowerDI 5060-8 (Type K)
Case Material: Molded Plastic, Green Molding Compound.
This MOSFET is designed to minimize the on-state resistance
UL Flammability Classification Rating 94V-0
(R ), yet maintain superior switching performance, making it
DS(ON)
Moisture Sensitivity: Level 1 per J-STD-020
ideal for high efficiency power management applications.
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Switching
Weight: 0.097 grams (Approximate)
Synchronous Rectification
DC-DC Converters
PowerDI5060-8 (Type K)
S
D
S
D
D
S
G D
Pin1
Bottom View Top View
Top View
Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMT6002LPS-13 PowerDI5060-8 (Type K) 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See
DMT6002LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 60 V
DSS
Gate-Source Voltage V 20 V
GSS
100
T = +25C
C
Continuous Drain Current, V = 10V (Notes 6 & 9) I A
GS D
100
T = +70C
C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 400 A
I
DM
Continuous Body Diode Forward Current (Note 6) 100 A
T = +25C I
C S
Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 400 A
I
SM
14
Avalanche Current, L = 3mH I A
AS
294
Avalanche Energy, L = 3mH E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.3 W
P
D
Thermal Resistance, Junction to Ambient (Note 5) 55 C/W
R
JA
Total Power Dissipation (Note 6) 167 W
P
D
Thermal Resistance, Junction to Case (Note 6) 0.9 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BVDSS VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
1.5 2
V = 10V, I = 50A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
2.2 3
V = 6V, I = 50A
GS D
Diode Forward Voltage 1.2 V
V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 6555
iss
V = 30V, V = 0V,
DS GS
2264
Output Capacitance C pF
oss
f = 1MHz
187
Reverse Transfer Capacitance C
rss
0.7
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
130.8
Total Gate Charge (VGS = 10V) Qg
63.6
Total Gate Charge (V = 4.5V) Q
GS g
nC V = 30V, I = 50A
DS D
Gate-Source Charge 20.8
Q
gs
Gate-Drain Charge 29.4
Q
gd
Turn-On Delay Time 11.2
t
D(ON)
Turn-On Rise Time 10.8
t V = 20V, V = 10V,
R DD GS
ns
44
Turn-Off Delay Time t I = 50A, R = 2.5
D(OFF) D g
19.5
Turn-Off Fall Time t
F
61.8
Reverse Recovery Time t ns
RR
I = 50A, di/dt = 100A/s
F
123
Reverse Recovery Charge Q nC
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
August 2018
Diodes Incorporated
2 of 7
DMT6002LPS
www.diodes.com
Document number: DS39090 Rev. 2 - 2