X-On Electronics has gained recognition as a prominent supplier of NTMTS0D6N04CLTXG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTMTS0D6N04CLTXG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTMTS0D6N04CLTXG ON Semiconductor

NTMTS0D6N04CLTXG electronic component of ON Semiconductor
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Part No.NTMTS0D6N04CLTXG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET T6 40V LL PQFN8*8 EXPANSI
Datasheet: NTMTS0D6N04CLTXG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.62 ea
Line Total: USD 6.62 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 3.8997
6000 : USD 3.8606
9000 : USD 3.8216
12000 : USD 3.7838
15000 : USD 3.746
24000 : USD 3.5545
30000 : USD 3.5192
45000 : USD 3.4839
75000 : USD 3.4486

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 6.62
10 : USD 4.0486
25 : USD 3.8198
100 : USD 3.2727
500 : USD 2.9146
1000 : USD 2.4968
3000 : USD 2.3874

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the NTMTS0D6N04CLTXG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTMTS0D6N04CLTXG and other electronic components in the MOSFETs category and beyond.

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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTMTS0D6N04CL Power MOSFET 40 V, 0.42 m , 554.5 A, Single NChannel Features Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D Typical Applications 0.42 m 10 V 40 V 554.5 A Power Tools, Battery Operated Vacuums 0.66 m 4.5 V UAV/Drones, Material Handling BMS/Storage, Home Automation D (58) MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS G (1) GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 554.5 A C D S (24) Current R (Note 2) State JC T = 100C 392.1 C NCHANNEL MOSFET Power Dissipation Steady T = 25C P 245.4 W C D R (Note 2) State JC T = 100C 122.7 C Continuous Drain Steady T = 25C I 78.9 A A D Current R State JA T = 100C 55.8 (Notes 1, 2) A Power Dissipation Steady T = 25C P 5.0 W A D R (Notes 1, 2) State JA T = 100C 2.5 A Pulsed Drain Current T = 25C, t = 10 s I 900 A DM A p POWER 88 CASE 507AP Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 Source Current (Body Diode) I 204.5 A S MARKING DIAGRAM Single Pulse DraintoSource Avalanche E 2058 mJ AS Energy (I = 52.7 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) XXXXXXXX AWLYWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS XXX = Device Code (8 AN characters max) Parameter Symbol Value Unit A = Assembly Location C/W JunctiontoCase Steady State (Note 2) R 0.61 JC WL = 2digit Wafer Lot Code Y = Year Code JunctiontoAmbient Steady State (Note 2) R 30.2 JA WW = Work Week Code 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2019 Rev. 1 NTMTS0D6N04CL/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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