ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTMTS0D6N04C Power MOSFET 40 V, 0.48 m , 533 A, Single NChannel Features Small Footprint (8x8 mm) for Compact Design Low R to Minimize Conduction Losses DS(on) www.onsemi.com Low Q and Capacitance to Minimize Driver Losses G These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant V R MAX I MAX (BR)DSS DS(ON) D Typical Applications 40 V 0.48 m 10 V 533 A Power Tools, Battery Operated Vacuums UAV/Drones, Material Handling D (58) BMS/Storage, Home Automation MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit G (1) DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS S (24) Continuous Drain Steady I A T = 25C 533 C D NCHANNEL MOSFET Current R (Note 2) State JC T = 100C 377 C Power Dissipation Steady T = 25C P 245 W C D R (Note 2) State JC T = 100C 122.7 C Continuous Drain Steady T = 25C I 76 A A D Current R State JA T = 100C 54 (Notes 1, 2) A Power Dissipation Steady P W T = 25C 5.0 A D R (Notes 1, 2) State JA T = 100C 2.5 A POWER 88 Pulsed Drain Current T = 25C, t = 10 s I 900 A A p DM CASE 507AP Operating Junction and Storage Temperature T , T 55 to C J stg +175 MARKING DIAGRAM Source Current (Body Diode) I 204.5 A S Single Pulse DraintoSource Avalanche E 2058 mJ AS Energy (I = 53 A) L(pk) Lead Temperature for Soldering Purposes T 260 C L 0D6N04C (1/8 from case for 10 s) AWLYWW Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A = Assembly Location THERMAL RESISTANCE MAXIMUM RATINGS WL = 2digit Wafer Lot Code Y = Year Code Parameter Symbol Value Unit WW = Work Week Code JunctiontoCase Steady State (Note 2) R 0.61 C/W JC JunctiontoAmbient Steady State (Note 2) R 30.2 JA ORDERING INFORMATION 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz. Cu pad. See detailed ordering, marking and shipping information in the 2. The entire application environment impacts the thermal resistance values shown, package dimensions section on page 5 of this data sheet. they are not constants and are only valid for the particular conditions noted. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2019 Rev. 1 NTMTS0D6N04C/D