NTNS3164NZT5G ON Semiconductor

NTNS3164NZ MOSFET Single, N-Channel, Small Signal, SOT-883 (XDFN3), 1.0 x 0.6 x 0.4 mm NTNS3164NZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 806 JA C/W JunctiontoAmbient t 5 s (Note 3) R 575 JA 2 3. Surfacemounted on FR4 board using the minimum recommended pad size, or 2 mm , 1 oz Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 23 (BR)DSS D mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, V = 20 V T = 25C 1 A DSS GS DS J GatetoSource Leakage Current I V = 0 V, V = 5 V 10 A GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 1.8 GS(TH) J mV/C Coefficient V = 4.5 V, I = 200 mA 0.5 0.7 GS D V = 2.5 V, I = 100 mA 0.7 1.0 GS D DraintoSource On Resistance R DS(on) V = 1.8 V, I = 50 mA 1.0 2.0 GS D V = 1.5 V, I = 10 mA 1.2 4.0 GS D Forward Transconductance g V = 5 V, I = 200 mA 1.26 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 100 mA 0.75 1.2 V SD GS S CHARGES & CAPACITANCES Input Capacitance C 24 ISS Output Capacitance C 5.0 V = 0 V, freq = 1 MHz, V = 10 V pF OSS GS DS Reverse Transfer Capacitance C 3.4 RSS Total Gate Charge Q 0.8 G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V GS DS nC I = 200 mA D GatetoSource Charge Q 0.2 GS GatetoDrain Charge Q 0.1 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) TurnOn Delay Time t 10 d(ON) Rise Time t 11 r V = 4.5 V, V = 10 V, GS DD ns I = 200 mA, R = 2 D G TurnOff Delay Time t 67 d(OFF) Fall Time t 31 f 4. Switching characteristics are independent of operating junction temperatures