NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 m Features NTB5860N, NTP5860N, NVB5860N ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS DS D DraintoSource Breakdown Voltage V /T 5.0 mV/C (BR)DSS J I = 250 A D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V GS V = 60 V DS T = 125C 100 J GateSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Threshold Temperature Coefficient V /T 10.1 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 75 A 2.5 3.0 m DS(on) GS D Forward Transconductance g V = 15 V, I = 30 A 38 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 10760 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 1125 oss f = 1 MHz Transfer Capacitance C 700 rss Total Gate Charge Q 180 nC G(TOT) Threshold Gate Charge Q 11 G(TH) V = 10 V, V = 48 V, GS DS I = 65 A D GatetoSource Charge Q 45 GS GatetoDrain Charge Q 57 GD SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 27 ns d(on) Rise Time t 117 r V = 10 V, V = 48 V, GS DD I = 65 A, R = 2.5 D G Turn Off Delay Time t 66 d(off) Fall Time t 150 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.76 1.1 V SD J dc V = 0 V GS I = 20 A S T = 125C 0.63 J Reverse Recovery Time t 55 ns rr Charge Time t 29 a V = 0 V, I = 65 A, GS S dI /dt = 100 A/ s S Discharge Time t 26 b Reverse Recovery Stored Charge Q 76 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.