NTP5863N N-Channel Power MOSFET 60 V, 97 A, 7.8 m Features Low R DS(on) High Current Capability NTP5863N ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 60 V (BR)DSS DS D DraintoSource Breakdown Voltage V /T 47 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V GS V = 60 V DS T = 125C 50 J GateBody Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 9.1 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 20 A 6.5 7.8 m DS(on) GS D Forward Transconductance g V = 15 V, I = 30 A 12 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 3200 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 350 oss f = 1 MHz Transfer Capacitance C 230 rss Total Gate Charge Q 55 nC G(TOT) Threshold Gate Charge Q 3.4 G(TH) V = 10 V, V = 48 V, GS DS I = 48 A D GatetoSource Charge Q 14.5 GS GatetoDrain Charge Q 19 GD Gate Resistance R 0.4 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS TurnOn Delay Time t 10 ns d(on) Rise Time t 34 r V = 10 V, V = 48 V, GS DD I = 48 A, R = 2.5 D G Turn Off Delay Time t 25 d(off) Fall Time t 9.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.96 1.5 SD J dc V = 0 V GS I = 48 A S T = 150C 0.85 J Reverse Recovery Time t 32 ns rr Charge Time t 20 a V = 0 V , I = 48 A , GS dc S dc dI /dt = 100 A/ s S Discharge Time t 12 b Reverse Recovery Stored Charge Q 28 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.