MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 20 A, 190 m NTPF190N65S3HF www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high V R MAX I MAX DSS DS(ON) D voltage superjunction (SJ) MOSFET family that is utilizing charge 650 V 190 m 10 V 20 A balance technology for outstanding low onresistance and lower gate charge performance. This advanced technology is tailored to minimize D conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery G performance of body diode can remove additional component and improve system reliability. S Features POWER MOSFET 700 V T = 150C J Typ. R = 152 m DS(on) Ultra Low Gate Charge (Typ. Q = 34 nC) g Low Effective Output Capacitance (Typ. C = 316 pF) oss(eff.) 100% Avalanche Tested G These Devices are PbFree and are RoHS Compliant D S Applications TO220 FULLPAK CASE 221D Computing / Display Power Supplies Telecom / Server Power Supplies MARKING DIAGRAM Industrial Power Supplies Lighting / Charger / Adapter Y&Z&3&K NTPF190 N65S3HF Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code NTPF190N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: September, 2019 Rev. 2 NTPF190N65S3HF/DNTPF190N65S3HF ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 20* A D C Continuous (T = 100C) 12.7* C I Drain Current Pulsed (Note 1) 50* A DM E Single Pulsed Avalanche Energy (Note 2) 220 mJ AS I Avalanche Current (Note 2) 3.7 A AS E Repetitive Avalanche Energy (Note 1) 0.36 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 36 W D C Derate Above 25C 0.29 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Drain current limited by maximum junction temperature. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 3.7 A, R = 25 , starting T = 25C. AS G J 3. I 10 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 3.5 C/W JC R Thermal Resistance, Junction to Ambient, Max. 62.5 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity TO220 NTPF190N65S3HF NTPF190N65S3HF Tube N/A N/A 50 Units FULLPACK www.onsemi.com 2