NTR3A052PZ MOSFET Power, Single P-Channel, SOT-23 -20 V, -3.6 A Features Leading 20 V Trench for Low R DS(on) www.onsemi.com 1.8 V Rated for Low Voltage Gate Drive These Devices are PbFree, Halogen Free/BFR Free and are RoHS V R Max I MAX Compliant (BR)DSS DS(on) D Applications 47 m 4.5 V Power Load Switch 20 V 63 m 2.5 V 3.6 A MAXIMUM RATINGS (T = 25C unless otherwise stated) J 100 m 1.8 V Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS PChannel MOSFET GatetoSource Voltage V 8 V GS D 3 Continuous Drain Current Steady T = 25C I 3.3 A A D (Note 1) State T = 70C 2.6 A G t 5 s T = 25C 3.6 A 1 T = 70C 2.9 A Power Dissipation T = 25C P W Steady 0.72 A D (Note 1) State S 2 t 5 s 0.86 MARKING DIAGRAM & Continuous Drain Current Steady T = 25C I 2.5 A D A PIN ASSIGNMENT (Note 2) State T = 70C 2.0 A Drain 3 Power Dissipation T = 25C P 0.42 W A D (Note 2) TRJ M Pulsed Drain Current t = 10 s I 13 A p DM SOT23 Operating Junction and Storage Temperature T , 55 to C J CASE 318 T 150 STG 1 2 STYLE 21 Gate Source Source Current (Body Diode) I 1.3 A S TRJ = Specific Device Code Lead Temperature for Soldering Purposes T 260 C L M = Date Code* (1/8 in from case for 10 s) = PbFree Package Stresses exceeding those listed in the Maximum Ratings table may damage the (Note: Microdot may be in either location) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *Date Code orientation may vary depending upon manufacturing location. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit ORDERING INFORMATION JunctiontoAmbient Steady State (Note 1) R 174 C/W JA Device Package Shipping JunctiontoAmbient t 5 s (Note 1) R 145 JA NTR3A052PZT1G SOT23 3000 / Tape & JunctiontoAmbient Steady State (Note 2) R 300 JA (PbFree) Reel 1. Surfacemounted on FR4 board using 1 in sq. pad size For information on tape and reel specifications, (Cu area = 727 mm sq., 1 oz). including part orientation and tape sizes, please 2. Surfacemounted on FR4 board using minimum pad size refer to our Tape and Reel Packaging Specification (Cu area = 3.8 mm sq., 1 oz). Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 1 NTR3A052PZ/DNTR3A052PZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 16 mV/C (BR)DSS J I = 250 A, ref to 25C D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1 A DSS J V = 0 V, GS V = 20 V DS T = 125C 100 A J GatetoSource Leakage Current I V = 0 V, V = 8 V 10 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature V /T 3.3 mV/C GS(TH) J Coefficient DraintoSource On Resistance R V = 4.5 V I = 3.5 A 33 47 m DS(on) GS D V = 2.5 V I = 3.0 A 41 63 GS D V = 1.8 V I = 2.0 A 54 100 GS D V = 1.5 V I = 0.5 A 69 GS D Forward Transconductance g V = 5 V, I = 3.5 A 16 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 1243 pF iss Output Capacitance C 194 oss V = 0 V, f = 1.0 MHz, V = 4 V GS DS Reverse Transfer Capacitance C 158 rss Total Gate Charge Q 11.9 nC G(TOT) Threshold Gate Charge Q 0.7 G(TH) V = 4.5 V, V = 4 V, GS DS I = 3.5 A D GatetoSource Charge Q 1.7 GS GatetoDrain Charge Q 2.6 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 8.0 ns d(on) Rise Time t 15 r V = 4.5 V, V = 4 V, GS DS I = 1.2 A, R = 6.0 D G TurnOff Delay Time t 38 d(off) Fall Time t 42 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.7 1.2 V SD J V = 0 V, GS I = 1.2 A S T = 125C 0.6 J Reverse Recovery Time t 18 ns RR Charge Time t 8.0 a V = 0 V, dI /dt = 100 A/ s, GS SD I = 1.2 A S Discharge Time t 10 b Reverse Recovery Charge Q 6.9 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width 300 ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2