X-On Electronics has gained recognition as a prominent supplier of NTR4101PT1H MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTR4101PT1H MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTR4101PT1H ON Semiconductor

NTR4101PT1H electronic component of ON Semiconductor
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See Product Specifications
Part No.NTR4101PT1H
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: NTR4101PT1H Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.644 ea
Line Total: USD 0.64 
Availability - 10330
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
231
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5759
10 : USD 0.4281
25 : USD 0.3991
100 : USD 0.1492

11
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.4316
10 : USD 0.3461
30 : USD 0.3081
100 : USD 0.2625
500 : USD 0.2434
1000 : USD 0.2302

10330
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.644
10 : USD 0.4451
100 : USD 0.2208
1000 : USD 0.1875
3000 : USD 0.1552
9000 : USD 0.1472

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the NTR4101PT1H from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTR4101PT1H and other electronic components in the MOSFETs category and beyond.

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NTR4101P, NTRV4101P MOSFET Power, Single P-Channel, Trench, SOT-23 -20 V Features wwwwww..onsemi.comonsemi.com Leading 20 V Trench for Low R DS(on) 1.8 V Rated for Low Voltage Gate Drive SOT23 Surface Mount for Small Footprint V R TYP I MAX (BR)DSS DS(ON) D NTRV Prefix for Automotive and Other Applications Requiring 70 m 4.5 V Unique Site and Control Change Requirements AECQ101 20 V 90 m 2.5 V 3.2 A Qualified and PPAP Capable 112 m 1.8 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant PChannel MOSFET Applications S Load/Power Management for Portables Load/Power Management for Computing Charging Circuits and Battery Protection G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS D GatetoSource Voltage V 8.0 V GS MARKING DIAGRAM & Continuous Drain Steady T = 25C I 2.4 A A D PIN ASSIGNMENT Current (Note 1) State T = 85C 1.7 A 3 t 10 s T = 25C 3.2 A 3 Drain Power Dissipation Steady T = 25C P 0.73 W A D (Note 1) State 1 TR4 M t 10 s 1.25 2 Continuous Drain Steady T = 25C I 1.8 A A D SOT23 Current (Note 2) State CASE 318 T = 85C 1.3 1 2 A STYLE 21 Gate Source Power Dissipation T = 25C P 0.42 W A D (Note 2) TR4 = Device Code Pulsed Drain Current tp = 10 s I 18 A DM M = Date Code = PbFree Package ESD Capability (Note 3) C = 100 pF, ESD 225 V RS = 1500 (Note: Microdot may be in either location) Operating Junction and Storage Temperature T , 55 to C J 150 T STG ORDERING INFORMATION Source Current (Body Diode) I 2.4 A S Device Package Shipping Single Pulse DraintoSource Avalanche EAS 16 mJ Energy (V = 8 V, I = 1.8 Apk, L = 10 mH, GS L NTR4101PT1G SOT23 3000 / Tape & R = 25 ) G (PbFree) Reel NTRV4101PT1G Lead Temperature for Soldering T 260 C L Purposes (1/8 from case for 10 s) For information on tape and reel specifications, including part orientation and tape sizes, please Stresses exceeding those listed in the Maximum Ratings table may damage the refer to our Tape and Reel Packaging Specifications device. If any of these limits are exceeded, device functionality should not be Brochure, BRD8011/D. assumed, damage may occur and reliability may be affected. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2019 Rev. 12 NTR4101P/DNTR4101P, NTRV4101P THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 1) R 170 C/W JA JunctiontoAmbient t < 10 s (Note 1) 100 R JA JunctiontoAmbient Steady State (Note 2) R 300 JA 1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces) 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. ESD Rating Information: HBM Class 0 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 4) V 20 V (BR)DSS (V = 0 V, I = 250 A) GS D Zero Gate Voltage Drain Current (Note 4) I 1.0 A DSS (V = 0 V, V = 16 V) GS DS GatetoSource Leakage Current I 100 nA GSS (V = 8.0 V, V = 0 V) GS DS ON CHARACTERISTICS Gate Threshold Voltage (Note 4) V 0.4 0.72 1.2 V GS(th) (V = V , I = 250 A) GS DS D DraintoSource OnResistance R m DS(on) (V = 4.5 V, I = 1.6 A) 70 85 GS D (V = 2.5 V, I = 1.3 A) 90 120 GS D (V = 1.8 V, I = 0.9 A) 112 210 GS D Forward Transconductance (V = 5.0 V, I = 2.3 A) g 7.5 S DS D FS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 675 pF iss Output Capacitance C 100 (V = 0 V, f = 1 MHz, V = 10 V) GS DS oss Reverse Transfer Capacitance C 75 rss Total Gate Charge (V = 4.5 V, V = 10 V, I = 1.6 A) Q 7.5 8.5 nC GS DS D G(tot) GatetoSource Gate Charge (V = 10 V, I = 1.6 A) Q 1.2 nC DS D GS GatetoDrain Miller Charge (V = 10 V, I = 1.6 A) Q 2.2 nC DS D GD Gate Resistance R 6.5 G SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 7.5 ns d(on) Rise Time t 12.6 r (V = 4.5 V, V = 10 V, GS DS I = 1.6 A, R = 6.0 ) D G TurnOff Delay Time t 30.2 d(off) Fall Time t 21.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage (V = 0 V, I = 2.4 A) V 0.82 1.2 V GS S SD Reverse Recovery Time t 12.8 15 ns rr (V = 0 V, GS Charge Time t 9.9 ns a dI /dt = 100 A/ s, I = 1.6 A) SD S Discharge Time t 3.0 ns b Reverse Recovery Charge Q 1008 nC rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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