X-On Electronics has gained recognition as a prominent supplier of NTTFS4C10NTAG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTTFS4C10NTAG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTTFS4C10NTAG ON Semiconductor

NTTFS4C10NTAG electronic component of ON Semiconductor
NTTFS4C10NTAG ON Semiconductor
NTTFS4C10NTAG MOSFETs
NTTFS4C10NTAG  Semiconductors

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See Product Specifications
Part No. NTTFS4C10NTAG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: ON Semiconductor MOSFET
Datasheet: NTTFS4C10NTAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4499 ea
Line Total: USD 0.45 
Availability - 5679
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5679
Ship by Fri. 10 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4499
10 : USD 0.36
30 : USD 0.3198
100 : USD 0.272
500 : USD 0.2431
1500 : USD 0.2298

   
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We are delighted to provide the NTTFS4C10NTAG from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTTFS4C10NTAG and other electronic components in the MOSFETs category and beyond.

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NTTFS4C10N MOSFET Power, Single, N-Channel, 8FL 30 V, 44 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses V R MAX I MAX (BR)DSS DS(on) D Optimized Gate Charge to Minimize Switching Losses 7.4 m 10 V These Devices are PbFree, Halogen Free/BFR Free and are RoHS 30 V 44 A Compliant 11 m 4.5 V Applications NChannel MOSFET DCDC Converters Power Load Switch D (58) Notebook Battery Management MAXIMUM RATINGS (T = 25C unless otherwise stated) J G (4) Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS S (1,2,3) GatetoSource Voltage V 20 V GS Continuous Drain I A T = 25C 13.3 A D Current R (Note 1) JA MARKING DIAGRAM T = 80C 9.9 A 1 Power Dissipation R T = 25C P 2.09 W JA A D 1 S D (Note 1) 4C10 WDFN8 S D Continuous Drain I A T = 25C 18.2 AYWW A D ( 8FL) S D Current R 10 s JA G D CASE 511AB T = 80C 13.6 (Note 1) A Power Dissipation T = 25C P 3.9 W A D 4C10 = Specific Device Code R 10 s (Note 1) Steady JA A = Assembly Location State Continuous Drain T = 25C I 8.2 A D A Y = Year Current R (Note 2) JA WW = Work Week T = 80C 6.1 A = PbFree Package Power Dissipation T = 25C P 0.79 W A D R (Note 2) (Note: Microdot may be in either location) JA Continuous Drain T = 25C I 44 A D C Current R (Note 1) JC T = 80C 33 C ORDERING INFORMATION Power Dissipation T = 25C P 23.6 W C D Device Package Shipping R (Note 1) JC NTTFS4C10NTAG WDFN8 1500 / Tape & Pulsed Drain Current T = 25C, t = 10 s I 128 A A p DM (PbFree) Reel Operating Junction and Storage Temperature T , 55 to C J T +150 stg NTTFS4C10NTWG WDFN8 5000 / Tape & (PbFree) Reel Source Current (Body Diode) I 20 A S For information on tape and reel specifications, Drain to Source dV/dt dV/dt 6.0 V/ns including part orientation and tape sizes, please Single Pulse DraintoSource Avalanche Energy E 31 mJ AS refer to our Tape and Reel Packaging Specification (T = 25C, V = 50 V, V = 10 V, I = 25 A , J DD GS L pk Brochure, BRD8011/D. L = 0.1 mH, R = 25 ) (Note 3) G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: June, 2019 Rev. 3 NTTFS4C10N/DNTTFS4C10N 2. Surfacemounted on FR4 board using the minimum recommended pad size. 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 10 V, I = 17 A, E = 14 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 5.3 JC JunctiontoAmbient Steady State (Note 4) R 59.9 JA C/W JunctiontoAmbient Steady State (Note 5) 157.8 R JA JunctiontoAmbient (t 10 s) (Note 4) R 31.8 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 7.1 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 14.5 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.5 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 5.9 7.4 DS(on) GS D m V = 4.5 V I = 15 A 8.8 11 GS D Forward Transconductance g V = 1.5 V, I = 15 A 43 S FS DS D Gate Resistance R T = 25C 1.0 G A CHARGES AND CAPACITANCES Input Capacitance C 993 ISS Output Capacitance C 574 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 163 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.164 RSS ISS GS DS Total Gate Charge Q 9.7 G(TOT) Threshold Gate Charge Q 1.5 G(TH) nC GatetoSource Charge Q 2.8 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 4.8 GD Gate Plateau Voltage V 3.2 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 18.6 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) 6. Pulse Test: pulse width 300 s, duty cycle 2%. 7. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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